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IMT18

Rohm
Part Number IMT18
Manufacturer Rohm
Description General purpose transistors
Published Feb 17, 2007
Detailed Description www.DataSheet4U.com EMT18 / UMT18N / IMT18 Transistors General purpose transistors (dual transistors) EMT18 / UMT18N /...
Datasheet PDF File IMT18 PDF File

IMT18
IMT18



Overview
www.
DataSheet4U.
com EMT18 / UMT18N / IMT18 Transistors General purpose transistors (dual transistors) EMT18 / UMT18N / IMT18 zFeatures 1) Two 2SA2018 chips in a EMT package.
2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating interference.
zExternal dimensions (Unit : mm) (4) (5) (6) (3) (2) 0.
13 1.
2 1.
6 (1) Each lead has same dimensions ROHM : EMT6 Abbreviated symbol : T18 0.
65 1.
3 0.
65 0.
7 0.
95 0.
95 0.
8 zStructure Epitaxial planar type NPN silicon transistor (4) UMT18N 0.
2 (3) 0.
5 0.
5 0.
5 1.
0 1.
6 0.
22 EMT18 (6) 1.
25 2.
1 0.
15 (1) The following characteristics apply to both Tr1 and Tr2.
ROHM : UMT6 EIAJ : SC-88 0.
1Min.
Each lead has same dimensions Abbreviated symbol : T18 (6) zEquivalent circuit EMT18 / UMT18N (3) (2) (1) IMT18 0.
3 (1) 0.
9 IMT18 (4) (5) (6) 0.
15 (4) (5) 1.
6 2.
8 (3) (2) Tr1 Tr2 Tr2 Tr1 0.
3Min.
Each lead has same dimensions (4) (5) (6) (3) (2) (1) ROHM : SMT6 EIAJ : SC-74 JEDEC : SOT-457 Abbreviated symbol : T18 zAbsolute maximum ratings (Ta=25°C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Limits Symbol VCBO −15 VCEO −12 VEBO −6 IC −500 ∗1 ICP 1.
0 EMT6 ∗2 150 (TOTAL) PC UMT6 SMT6 300 (TOTAL)∗3 Tj 150 Tstg −55 to +150 Unit V V V mA A mW °C °C Power dissipation Junction temperature Storage temperature ∗1 Single pulse PW=1ms ∗2 120mW per element must not be exceeded.
∗3 200mW per element must not be exceeded.
Rev.
A 1.
1 1.
9 2.
9 2.
0 (5) (2) 1/3 EMT18 / UMT18N / IMT18 Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min.
Typ.
Collector-base breakdown voltage BVCBO −15 − − Collector-emitter breakdown voltage BVCEO −12 Emitter-base breakdown voltage BVEBO −6 − Collector cutoff current ICBO − − Emitter cutoff current IEBO − − Collector-emitter saturation voltage VCE (sat) − −100 DC current transfer ratio hFE 270 − Transition frequency fT − 260 Output capac...



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