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SGM2013N

Sony Corporation
Part Number SGM2013N
Manufacturer Sony Corporation
Description GaAs N-channel Dual-Gate MES FET
Published Apr 8, 2005
Detailed Description SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office. Descrip...
Datasheet PDF File SGM2013N PDF File

SGM2013N
SGM2013N

Overview
SGM2013N GaAs N-channel Dual-Gate MES FET For the availability of this product, please contact the sales office.
Description The SGM2013N is an N-channel dual-gate GaAs MES FET for UHF-band low-noise amplification.
This FET is suitable for a wide range of applications including cellular/cordless phone.
Features • Ultra-small package • Low voltage operation • Low noise NF = 1.
4dB (Typ) at 900MHz, NF = 1.
7dB (Typ) at 1.
5GHz • High gain Ga = 18dB (Typ) at 900MHz, Ga = 16dB (Typ) at 1.
5GHz • High stability • Built-in gate protection diode Application UHF-band high-frequency amplifier and mixer Structure GaAs, N-channel, dual-gate metal semiconductor field-effect transistor Absolute Maximum Ratings (Ta = 25°C) • Drain to source voltage VDSX 6 • Gate 1 to source voltage VG1S –4 • Gate 2 to source voltage VG2S –4 • Drain current ID 18 • Allowable power dissipation PD 100 • Channel temperature Tch 125 • Storage temperature Tstg –55 to +150 M-281 V V V mA mW °C °C Sony reserves the right to change products and specifications without prior notice.
This information does not convey any license by any implication or otherwise under any patents or other right.
Application circuits shown, if any, are typical examples illustrating the operation of the devices.
Sony cannot assume responsibility for any problems arising out of the use of these circuits.
–1– E97144-PS SGM2013N Electrical Characteristics Item Gate 1 to source current Symbol IG1SS Conditions VG1S = –3V VG2S = 0V VDS = 0V VG2S = –3V VG1S = 0V VDS = 0V VDS = 2V VG1S = 0V VG2S = 0V VDS = 2V ID = 100µA VG2S = 0V VDS = 2V ID = 100µA VG1S = 0V VDS = 2V ID = 2mA VG2S = 0.
5V f = 1kHz VDS = 2V ID = 2mA VG2S = 0.
5V f = 1MHz VDS = 2V ID = 2mA VG2S = 0.
5V f = 900MHz Min.
Typ.
(Ta = 25°C) Max.
–4 Unit µA Gate 2 to source current IG2SS –4 µA Drain saturation current Gate 1 to source cut-off voltage Gate 2 to source cut-off voltage IDSS VG1S (OFF) VG2S (OFF) 4 16 mA –1.
5 V –1.
5 V Forward transfer admittance Input ...


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