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IRF550

Fairchild Semiconductor
Part Number IRF550
Manufacturer Fairchild Semiconductor
Description Advanced Power MOSFET
Published Apr 16, 2005
Detailed Description Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved...
Datasheet PDF File IRF550 PDF File

IRF550
IRF550

Overview
Advanced Power MOSFET FEATURES Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area 175 C Operating Temperature Lower Leakage Current : 10 µA (Max.
) @ VDS = 100V Lower RDS(ON) : 0.
032 Ω (Typ.
) Ο IRF550A BVDSS = 100 V RDS(on) = 0.
04 Ω ID = 40 A TO-220 1 2 3 1.
Gate 2.
Drain 3.
Source Absolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Current (TC=25 C) Ο Value 100 40 28.
3 1 O Ο Units V A A V mJ A mJ V/ns W W/ C Ο Continuous Drain Current (TC=100 C) Drain Current-Pulsed Gate-to-Source Voltage Single Pulsed Avalanche Energy Ava...


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