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IRF5810

International Rectifier
Part Number IRF5810
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD -94198 IRF5810 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available...
Datasheet PDF File IRF5810 PDF File

IRF5810
IRF5810

Overview
PD -94198 IRF5810 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual P-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge VDSS -20V RDS(on) max (mΩ) 90@VGS = -4.
5V 135@VGS = -2.
5V ID -2.
9A -2.
3A Description These P-channel HEXFET® Power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
With two die per packag...


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