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IRF5851

International Rectifier
Part Number IRF5851
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD-93998A IRF5851 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Ava...
Datasheet PDF File IRF5851 PDF File

IRF5851
IRF5851

Overview
PD-93998A IRF5851 HEXFET® Power MOSFET l l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge N-Ch G1 1 6 D1 P-Ch -20V S2 2 5 S1 VDSS 20V G2 3 4 D2 RDS(on) 0.
090Ω 0.
135Ω Description These N and P channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area.
This benefit provides the designer with an extremely efficient device for use in battery and load management applications.
This Dual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required.
With two die per package, the IRF5851 can provide the functionality of two SOT-23 packages in a smaller footprint.
Its unique thermal design and RDS(on) reduction enables an increase in current-handling capability.
TSOP-6 Absolute Maximum Ratings Parameter VDS ID @ TA = 25°C ID @ TA = 70°C IDM PD @TA = 25°C PD @TA = 70°C VGS TJ, TSTG Drain-to-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation ƒ Power Dissipation ƒ Linear Derating Factor Gate-to-Source Voltage Junction and Storage Temperature Range Max.
N-Channel 20 2.
7 2.
2 11 0.
96 0.
62 7.
7 ± 12 -55 to + 150 P-Channel -20 -2.
2 -1.
7 -9.
0 Units A W mW/°C V °C Thermal Resistance Parameter RθJA Maximum Junction-to-Ambient ƒ Typ.
––– Max.
130 Units °C/W www.
irf.
com 1 2/26/02 IRF5851 Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Parameter V(BR)DSS Drain-to-Source Breakdown Voltage N-Ch P-Ch N-Ch P-Ch N-Ch RDS(ON) Static Drain-to-Source On-Resistance P-Ch VGS(th) gfs Gate Threshold Voltage Forward Transconductance N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-P N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch Min.
Typ.
Max.
20 — — -20 — — — 0.
016 — — -0.
011 — — — 0.
090 — — 0.
120 — — 0.
135 — — ...


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