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IRF620

Fairchild Semiconductor
Part Number IRF620
Manufacturer Fairchild Semiconductor
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description Data Sheet January 2002 IRF620 5.0A, 200V, 0.800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon ...
Datasheet PDF File IRF620 PDF File

IRF620
IRF620

Overview
Data Sheet January 2002 IRF620 5.
0A, 200V, 0.
800 Ohm, N-Channel Power MOSFET This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of energy in the breakdown avalanche mode of operation.
All of these power MOSFETs are designed for applications such as switching regulators, switching convertors, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power.
These types can be operated directly from integrated circuits.
Formerly developmental type TA9600.
Ordering Information PART NUMBER IRF620 PACKAGE TO-220AB BRAND IRF620 NOTE: When ordering, use the entire part number.
Features • 5.
0A, 200V • rDS(ON) = 0.
800Ω • Single Pulse Avalanche Energy Rated • SOA is Power Dissipation Limited • Nanosecond Switching Speeds • Linear Transfer Characteristics • High Input Impedance • Related Literature - TB334 “Guidelines for Soldering Surface Mount Components to PC Boards” Symbol D G S Packaging JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE ©2002 Fairchild Semiconductor Corporation IRF620 Rev.
B IRF620 Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified IRF620 UNITS Drain to Source Voltage (Note 1) .
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VDS Drain to Gate Voltage (RGS = 20kΩ) (Note 1) .
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VDGR Continuous Drain Current .
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ID TC = 100oC .
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ID Pulsed Drain Current (Note 3) .
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IDM Gate to Source Voltage .
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