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IRF640

STMicroelectronics
Part Number IRF640
Manufacturer STMicroelectronics
Description N-Channel MOSFET
Published Apr 16, 2005
Detailed Description ® IRF640 IRF640FP N - CHANNEL 200V - 0.150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V...
Datasheet PDF File IRF640 PDF File

IRF640
IRF640

Overview
® IRF640 IRF640FP N - CHANNEL 200V - 0.
150Ω - 18A TO-220/TO-220FP MESH OVERLAY™ MOSFET TYPE IRF640 IRF640FP s s s s V DSS 200 V 200 V R DS(on) < 0.
18 Ω < 0.
18 Ω ID 18 A 18 A TYPICAL RDS(on) = 0.
150 Ω EXTREMELY HIGH dV/dt CAPABILITY VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 1 2 1 2 3 DESCRIPTION This power MOSFET is designed using he company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
TO-220 TO-220FP APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID I DM ( • ) P tot dv/dt( 1 ) V ISO Ts tg Tj Parameter IRF640 Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) G ate-source Voltage Drain Current (continuous) at Tc = 25 o C Drain Current (continuous) at Tc = 100 oC Drain Current (pulsed) T otal Dissipation at T c = 25 oC Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Storage Temperature Max.
Operating Junction Temperature 18 11 72 125 1.
0 5  -65 to 150 150 200 200 ± 20 18(**) 11(**) 72 40 0.
32 5 2000 Value IRF 640F P V V V A A A W W/ C V/ns V o o o Un it C C (•) Pulse width limited by safe operating area ( 1) ISD ≤ 18A, di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet (**) Limited only by Maximum Temperature Allowed October 1999 1/9 IRF640/FP THERMAL DATA TO-220 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 1.
0 62.
5 0.
5 300 TO-220FP 3.
12 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose AVALANCHE CHARACTERISTICS Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse...


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