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IRF730

NXP
Part Number IRF730
Manufacturer NXP
Description PowerMOS transistor
Published Apr 16, 2005
Detailed Description Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanch...
Datasheet PDF File IRF730 PDF File

IRF730
IRF730

Overview
Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated FEATURES • Repetitive Avalanche Rated • Fast switching • High thermal cycling performance • Low thermal resistance g IRF730 SYMBOL d QUICK REFERENCE DATA VDSS = 400 V ID = 7.
2 A RDS(ON) ≤ 1 Ω s GENERAL DESCRIPTION N-channel, enhancement mode field-effect power transistor, intended for use in off-line switched mode power supplies, T.
V.
and computer monitor power supplies, d.
c.
to d.
c.
converters, motor control circuits and general purpose switching applications.
The IRF730 is supplied in the SOT78 (TO220AB) conventional leaded package.
PINNING PIN 1 2 3 tab gate drain source drain DESCRIPTION SOT78 (TO220AB) tab 1 23 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total dissipation Operating junction and storage temperature range CONDITIONS Tj = 25 ˚C to 150˚C Tj = 25 ˚C to 150˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN.
- 55 MAX.
400 400 ± 30 7.
2 4.
6 29 125 150 UNIT V V V A A A W ˚C AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy CONDITIONS MIN.
MAX.
290 UNIT mJ Unclamped inductive load, IAS = 4.
8 A; tp = 0.
23 ms; Tj prior to avalanche = 25˚C; VDD ≤ 50 V; RGS = 50 Ω; VGS = 10 V; refer to fig:17 Repetitive avalanche energy1 IAR = 7.
2 A; tp = 2.
5 µs; Tj prior to avalanche = 25˚C; RGS = 50 Ω; VGS = 10 V; refer to fig:18 Repetitive and non-repetitive avalanche current EAR IAS, IAR - 9.
4 7.
2 mJ A 1 pulse width and repetition rate limited by Tj max.
March 1999 1 Rev 1.
000 Philips Semiconductors Product specification PowerMOS transistor Avalanche energy rated THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Therm...


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