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IRF730

STMicroelectronics
Part Number IRF730
Manufacturer STMicroelectronics
Description N-Channel Power MOSFET
Published Apr 16, 2005
Detailed Description ® IRF730 N - CHANNEL 400V - 0.75 Ω - 5.5A - TO-220 PowerMESH™ MOSFET TYPE IRF730 s s s s s V DSS 400 V R DS(on) < 1Ω...
Datasheet PDF File IRF730 PDF File

IRF730
IRF730

Overview
® IRF730 N - CHANNEL 400V - 0.
75 Ω - 5.
5A - TO-220 PowerMESH™ MOSFET TYPE IRF730 s s s s s V DSS 400 V R DS(on) < 1Ω ID 5.
5 A TYPICAL RDS(on) = 0.
75 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DESCRIPTION This power MOSFET is designed using the company’s consolidated strip layout-based MESH OVERLAY™ process.
This technology matches and improves the performances compared with standard parts from various sources.
APPLICATIONS s HIGH CURRENT SWITCHING s UNINTERRUPTIBLE POWER SUPPLY (UPS) s DC/DC COVERTERS FOR TELECOM, INDUSTRIAL, AND LIGHTING EQUIPMENT.
3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V DS V DGR V GS ID ID IDM ( • ) P t ot dv/dt( 1 ) T stg Tj Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω ) Gate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) Total Dissipation at Tc = 25 C Derating F actor Peak Diode Recovery voltage slope Storage T emperature Max.
O perating Junction Temperature o o o Value 400 400 ± 20 5.
5 3.
5 22 100 0.
8 4.
0 -65 to 150 150 Uni t V V V A A A W W/ C V/ ns o o o C C (•) Pulse width limited by safe operating area (1) ISD ≤ 5.
5 A, di/dt ≤ 90 Α/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX First Digit of the Datecode Being Z or K Identifies Silicon Characterized in this Datasheet August 1998 1/8 IRF730 THERMAL DATA R t hj-ca se Rthj -amb R thc- si nk Tl Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature For Soldering Purpose 1.
25 62.
5 0.
5 300 C/W oC/W o C/W o C o AVALANCHE CHARACTERISTICS Symb ol I AR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max) Single Pulse Avalanche Energy (starting Tj = 25 o C, I D = IAR , VDD = 50 V) Max Valu e 5.
5 300 Unit A mJ ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise spec...


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