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IRFI1310N

International Rectifier
Part Number IRFI1310N
Manufacturer International Rectifier
Description Power MOSFET
Published Apr 16, 2005
Detailed Description PD - 9.1611A PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.5KVRMS … l Sink to L...
Datasheet PDF File IRFI1310N PDF File

IRFI1310N
IRFI1310N

Overview
PD - 9.
1611A PRELIMINARY Advanced Process Technology Isolated Package l High Voltage Isolation = 2.
5KVRMS … l Sink to Lead Creepage Dist.
= 4.
8mm l Fully Avalanche Rated Description l l IRFI1310N HEXFET® Power MOSFET D VDSS = 100V G S RDS(on) = 0.
036Ω ID = 24A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.
This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.
The TO-220 Fullpak eliminates the need for ...


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