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IRFI610B

Fairchild Semiconductor
Part Number IRFI610B
Manufacturer Fairchild Semiconductor
Description 200V N-Channel MOSFET
Published Apr 16, 2005
Detailed Description IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description These N-Channel enhanc...
Datasheet PDF File IRFI610B PDF File

IRFI610B
IRFI610B

Overview
IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features • • • • • • 3.
3A, 200V, RDS(on) = 1.
5Ω @VGS = 10 V Low gate charge ( typical 7.
2 nC) Low Crss ( typical 6.
8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source V...


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