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IRFI610B

Fairchild Semiconductor
Part Number IRFI610B
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Dec 2, 2013
Detailed Description IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description These N-Channel enhanc...
Datasheet PDF File IRFI610B PDF File

IRFI610B
IRFI610B

Overview
IRFW610B / IRFI610B November 2001 IRFW610B / IRFI610B 200V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters, switch mode power supplies, DC-AC converters for uninterrupted power supply and motor control.
Features • • • • • • 3.
3A, 200V, RDS(on) = 1.
5Ω @VGS = 10 V Low gate charge ( typical 7.
2 nC) Low Crss ( typical 6.
8 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G S D2-PAK IRFW Series G D S I2-PAK IRFI Series G! ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed (Note 1) IRFW610B / IRFI610B 200 3.
3 2.
1 10 ± 30 (Note 2) (Note 1) (Note 1) (Note 3) Units V A A A V mJ A mJ V/ns W W W/°C °C °C Gate-Source Voltage Single Pulsed Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * 40 3.
3 3.
8 5.
5 3.
13 38 0.
31 -55 to +150 300 TJ, Tstg TL Power Dissipation (TC = 25°C) - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RθJC RθJA RθJA Parameter Thermal Resistance, Junction-to-Case Thermal Resistance, Junction-to-Ambient * Thermal Resistance, Junction-to-Ambient Typ ---Max 3.
28 40 62.
5 Units °C/W °C/W °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2001 Fairchild Semiconductor Corporation Rev.
B, November 2001 Free Datasheet http://www.
datasheet4u.
c...


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