DatasheetsPDF.com

IRFI614B

Fairchild Semiconductor
Part Number IRFI614B
Manufacturer Fairchild Semiconductor
Description N-Channel MOSFET
Published Dec 2, 2013
Detailed Description IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel MOSFET General Description These N-Channel enhanc...
Datasheet PDF File IRFI614B PDF File

IRFI614B
IRFI614B

Overview
IRFW614B / IRFI614B November 2001 IRFW614B / IRFI614B 250V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switching DC/DC converters and switch mode power supplies.
Features • • • • • • 2.
8A, 250V, RDS(on) = 2.
0Ω @VGS = 10 V Low gate charge ( typical 8.
1 nC) Low Crss ( typical 7.
5 pF) Fast switching 100% avalanche tested Improved dv/dt capability D D ! ● ◀ ▲ ● ● G! G S D2-PAK IRFW Series G D S I2-PAK IRFI Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 10...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)