DatasheetsPDF.com

RMPA1959 Datasheet PDF

Fairchild Semiconductor
Part Number RMPA1959
Manufacturer Fairchild Semiconductor
Title PCS 3.4V CDMA & CDMA2000-1X PowerEdge Power Amplifier Module
Description The RMPA1959 power amplifier module (PAM) is designed for CDMA and CDMA2000-1X personal communications system (PCS) applications. The 2 stage PAM ...
Features advanced DC power management to reduce current consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) technology. Features
• Single positive-supply operation and low power and shutdown modes
• 39%...

File Size 562.00KB
Datasheet PDF File RMPA1959 PDF File


RMPA1959 RMPA1959 RMPA1959




Similar Ai Datasheet

RMPA1963 : The RMPA1963 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50 Ohm matched, surface mount modules targeting US-PCS CDMA/WCDMA/HSDPA and Wireless Local Loop (WLL) applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA1963 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels ( +16 dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 50% at 16 dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No ad.

RMPA1965 : The RMPA1965 power amplifier module (PAM) is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN 2 Vmode 3 DC BIAS CONTROL Vref 4 INPUT MATCH OUTPUT MATCH 8 Vcc2 7 RF OUT 6 GND 5 GND (paddle ground on package bottom) ©2005 Fairchild Semiconductor Corporation 1 .

RMPA1966 : The RMPA1966 Power Amplifier Module (PAM) is Fairchild’s latest innovation in 50Ω matched, surface mount modules targeting UMTS/WCDMA/HSDPA applications. Answering the call for ultra-low DC power consumption and extended battery life in portable electronics, the RMPA1966 uses novel proprietary circuitry to dramatically reduce amplifier current at low to medium RF output power levels ( +16dBm), where the handset most often operates. A simple two-state Vmode control is all that is needed to reduce operating current by more than 60% at 16dBm output power, and quiescent current (Iccq) by as much as 70% compared to traditional power-saving methods. No additional circuitry, such as DC-to-DC convert.

RMPA1967 : The RMPA1967 power amplifier module (PAM) is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications. The 2-stage PAM is internally matched to 50 Ohms to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage. High power-added efficiency and excellent linearity are achieved using Fairchild RF’s InGaP Heterojunction Bipolar Transistor (HBT) process. Device Functional Block Diagram (Top View) MMIC Vref 1 DC Bias Control Vmode 2 Input Match Output Match 7 GND 8 GND RF IN 3 6 RF OUT Vcc1 4 5 Vcc2 (paddle ground on package bottom) ©2005 Fairchild Semicon.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)