DatasheetsPDF.com

RMPA1965

Fairchild Semiconductor
Part Number RMPA1965
Manufacturer Fairchild Semiconductor
Description CDMA2000-1X and WCDMA PowerEdge Power Amplifier Module
Published Mar 9, 2007
Detailed Description www.DataSheet4U.com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module May 2005 RMPA1965 U...
Datasheet PDF File RMPA1965 PDF File

RMPA1965
RMPA1965

Overview
www.
DataSheet4U.
com RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module May 2005 RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Features ■ Single positive-supply operation with low power and shutdown modes ■ 40% CDMA/WCDMA efficiency at +28 dBm average output power ■ Compact lead-free compliant low-profile package (3.
0 x 3.
0 x 1.
0 mm nominal) ■ Internally matched to 50Ω and DC blocked RF input/output ■ Meets CDMA2000-1XRTT/WCDMA performance requirements ■ Meets HSDPA performance requirement General Description The RMPA1965 power amplifier module (PAM) is designed for CDMA, CDMA2000-1X, WCDMA and HSDPA personal communications system (PCS) applications.
The 2 stage PAM is internally matched to 50Ω to minimize the use of external components and features a low-power mode to reduce standby current and DC power consumption during peak phone usage.
High power-added efficiency and excellent linearity are achieved using our InGaP Heterojunction Bipolar Transistor (HBT) process.
Device Functional Block Diagram (Top View) MMIC Vcc1 1 RF IN 2 Vmode 3 DC BIAS CONTROL Vref 4 INPUT MATCH OUTPUT MATCH 8 Vcc2 7 RF OUT 6 GND 5 GND (paddle ground on package bottom) ©2005 Fairchild Semiconductor Corporation 1 www.
fairchildsemi.
com RMPA1965 Rev.
I RMPA1965 US-PCS CDMA, CDMA2000-1X and WCDMA PowerEdge™ Power Amplifier Module Absolute Ratings1 Symbol Vcc1, Vcc2 Vref Vmode Pin TSTG Supply Voltages Reference Voltage Power Control Voltage RF Input Power Storage Temperature Parameter Value 5.
0 2.
6 to 3.
5 3.
5 +10 -55 to +150 Units V V V dBm °C Note: 1: No permanent damage with only one parameter set at extreme limit.
Other parameters set to typical values.
Electrical Characteristics1 Symbol f CDMA Operation SSg Gp Po PAEd Small-Signal Gain Power Gain Linear Output Power PAEd (digital) @ +28dBm PAEd (digital) @ +16dBm PAEd (digital) @ +16dBm Itot High Power Total Current Low Power Total Current Adjacent Channel Power Ra...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)