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Q62702-A120

Siemens Semiconductor Group
Part Number Q62702-A120
Manufacturer Siemens Semiconductor Group
Description Silicon PIN Diodes (RF switch RF attenuator for frequencies above 10 MHz)
Published Apr 16, 2005
Detailed Description Silicon PIN Diodes BAR 60 BAR 61 q q RF switch RF attenuator for frequencies above 10 MHz Type BAR 60 Marking 60 O...
Datasheet PDF File Q62702-A120 PDF File

Q62702-A120
Q62702-A120

Overview
Silicon PIN Diodes BAR 60 BAR 61 q q RF switch RF attenuator for frequencies above 10 MHz Type BAR 60 Marking 60 Ordering Code (tape and reel) Q62702-A786 Pin Configuration Package1) SOT-143 BAR 61 61 Q62702-A120 Maximum Ratings per Diode Parameter Reverse voltage Forward current Total power dissipation, TS ≤ 65 ˚C2) Junction temperature Storage temperature range Operating temperature range Thermal Resistance Junction - ambient 2) Junction - soldering point 1) 2) Symbol VR IF Ptot Tj Tstg Top Values 100 140 250 150 – 55 … + 150 – 55 … + 150 Unit V mA mW ˚C Rth JA Rth JS ≤ ≤ 580 340 K/W For detailed information see chapter Package Outlines.
Package mounted on alumina 15 mm × 16.
7 mm × 0.
7 mm.
Semiconductor Group 1 07.
94 BAR 60 BAR 61 Electrical Characteristics per Diode at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC/AC Characteristics Reverse current VR = 50 V VR = 100 V Forward voltage IF = 100 mA Diode capacitance VR = 50 V, f = 1 MHz VR = 0, f = 100 MHz Zero bias conductance VR = 0, f = 100 MHz Charge carrier life time IF = 10 mA, IR = 6 mA Differential forward resistance f = 100 MHz, IF = 0.
01 mA IF = 0.
1 mA IF = 1.
0 mA IF = 10 mA IR – – VF CT – – gp τL Values typ.
max.
Unit – – – 100 1 1.
25 nA µA V pF – 0.
25 0.
2 50 1 0.
5 – – – µS µs – – rf – – – – 2800 380 45 7 – – – – Ω Semiconductor Group 2 BAR 60 BAR 61 Forward current IF = f (VF) Forward current IF = f (TS; TA*) *Package mounted on alumina Forward resistance rf = f (IF) f = 100 MHz Diode capacitance CT = f (VR) Semiconductor Group 3 BAR 60 BAR 61 Application circuit for attenuation networks with diode BAR 60 Application circuit for attenuation networks with diode BAR 61 Semiconductor Group 4 ...


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