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Q62702-A912

Siemens Semiconductor Group
Part Number Q62702-A912
Manufacturer Siemens Semiconductor Group
Description Silicon Switching Diodes (Switching applications High breakdown voltage)
Published Apr 16, 2005
Detailed Description Silicon Switching Diodes BAS 78 A … BAS 78 D Switching applications q High breakdown voltage q Type BAS 78 A BAS 78 B...
Datasheet PDF File Q62702-A912 PDF File

Q62702-A912
Q62702-A912

Overview
Silicon Switching Diodes BAS 78 A … BAS 78 D Switching applications q High breakdown voltage q Type BAS 78 A BAS 78 B BAS 78 C BAS 78 D Marking BAS 78 A BAS 78 B BAS 78 C BAS 78 D Ordering Code (tape and reel) Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 78 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Values BAS BAS 78 B 78 C 100 100 1 1 10 1.
2 150 – 65 … + 150 200 200 Unit BAS 78 D 400 400 A V VR VRM IF IFM IFS Ptot Tj Tstg 50 50 W ˚C 92 22 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 1 5.
91 BAS 78 A … BAS 78 D Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 78 A BAS 78 B BAS 78 C BAS 78 D VF – – IR – – – – 1 50 – – 1.
6 2 µA Values typ.
max.
Unit V 50 100 200 400 – – – – – – – – Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VR max VR = VR max, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 200 mA, IR = 200 mA, RL = 100 Ω measured at IR = 20 mA CD trr – – 10 1 – – pF µs Test circuit for reverse recovery time Pulse generator: tp = 5 µs, D = 0.
05 tr = 0.
6 ns, Rj = 50 Ω Vp = VR + IF × Rj Oscillograph: R = 50 Ω tr = 0.
35 ns C ≤ 1 pF 1) Pulse test conditions: t ≤ 300 µs, D = 2 %.
Semiconductor Group 2 BAS 78 A … BAS 78 D Forward current IF = f (TA*; TS) * Package mounted on epoxy Forward current IF = f (VF) TA = 25 ˚C Reverse current IR = f (TA) VCE = 10 V Semiconductor Group 3 ...


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