DatasheetsPDF.com

Q62702-A913


Part Number Q62702-A913
Manufacturer Siemens Semiconductor Group
Title Silicon Switching Diodes (Switching applications High breakdown voltage)
Description Silicon Switching Diodes BAS 78 A BAS 78 D Switching applications q High breakdown voltage q Type BAS 78 A BAS 78 B BAS 78 C BAS 78 D Markin...
Features otherwise specified. Parameter Symbol min. DC characteristics Breakdown voltage I(BR) = 100 µA V(BR) BAS 78 A BAS 78 B BAS 78 C BAS 78 D VF
  –
  – IR
  –
  –
  –
  – 1 50
  –
  – 1.6 2 µA Values typ. max. Unit V 50 100 200 400
  –
  –
  –
  –
  –
  –
  –
  – Forward voltage1) IF = 1 A IF = 2 A Reverse current VR = VR max VR ...

File Size 66.81KB
Datasheet Q62702-A913 PDF File








Similar Ai Datasheet

Q62702-A910 : Silicon Switching Diodes BAS 78 A BAS 78 D Switching applications q High breakdown voltage q Type BAS 78 A BAS 78 B BAS 78 C BAS 78 D Marking BAS 78 A BAS 78 B BAS 78 C BAS 78 D Ordering Code (tape and reel) Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 78 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Values BAS BAS 78 B 78 C 100 100 1 1 10 1.2 150 – 65 + 150 200 200 Unit BAS.

Q62702-A911 : Silicon Switching Diodes BAS 78 A BAS 78 D Switching applications q High breakdown voltage q Type BAS 78 A BAS 78 B BAS 78 C BAS 78 D Marking BAS 78 A BAS 78 B BAS 78 C BAS 78 D Ordering Code (tape and reel) Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 78 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Values BAS BAS 78 B 78 C 100 100 1 1 10 1.2 150 – 65 + 150 200 200 Unit BAS.

Q62702-A912 : Silicon Switching Diodes BAS 78 A BAS 78 D Switching applications q High breakdown voltage q Type BAS 78 A BAS 78 B BAS 78 C BAS 78 D Marking BAS 78 A BAS 78 B BAS 78 C BAS 78 D Ordering Code (tape and reel) Q62702-A910 Q62702-A911 Q62702-A912 Q62702-A913 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 78 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 124 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Values BAS BAS 78 B 78 C 100 100 1 1 10 1.2 150 – 65 + 150 200 200 Unit BAS.

Q62702-A914 : Silicon Switching Diodes BAS 79 A BAS 79 D Switching applications q High breakdown voltage q Common cathode q Type BAS 79 A BAS 79 B BAS 79 C BAS 79 D Marking BAS 79 A BAS 79 B BAS 79 C BAS 79 D Ordering Code (tape and reel) Q62702-A914 Q62702-A915 Q62702-A916 Q62702-A917 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 79 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 114 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Values BAS BAS 79 B 79 C 100 100 1 1 10 1.2 150 – 65 + 150 200 200 Uni.

Q62702-A915 : .

Q62702-A916 : .

Q62702-A917 : Silicon Switching Diodes BAS 79 A BAS 79 D Switching applications q High breakdown voltage q Common cathode q Type BAS 79 A BAS 79 B BAS 79 C BAS 79 D Marking BAS 79 A BAS 79 B BAS 79 C BAS 79 D Ordering Code (tape and reel) Q62702-A914 Q62702-A915 Q62702-A916 Q62702-A917 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Symbol BAS 79 A Reverse voltage Peak reverse voltage Forward current Peak forward current Surge forward current, t = 1 µs Total power dissipation, TS = 114 ˚C2) Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point 1) 2) Values BAS BAS 79 B 79 C 100 100 1 1 10 1.2 150 – 65 + 150 200 200 Uni.

Q62702-A918 : Silicon Schottky Diode BAT 17-07 q q For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code (tape and reel) Q62702-A918 Pin Configuration 1 2 3 4 C1 C2 A2 A1 Marking Package BAT 17-07 57 SOT-143 Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS ≤ 60 °C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 4 130 150 150 – 55 + 150 – 55 + 150 Unit V mA mW °C °C °C VR IF Ptot Tj Top Tstg Rth JA Rth JS ≤ 750 ≤ 590 K/W K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.5 mm/1cm2 Cu. Semiconductor Group 1 10.

Q62702-A919 : Silicon Low Leakage Diode Low-leakage applications q Medium speed switching times q Single diode q BAS 116 Type BAS 116 Marking JVs Ordering Code (tape and reel) Q62702-A919 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 54 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 75 85 250 4.5 370 150 – 65 + 150 Unit V mA A mW ˚C 330 260 K/W 1) 2) For detailed information see chapter Package Outlines. Package mounted on epoxy pcb 40.




Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)