DatasheetsPDF.com

Q62702-A918

Part Number	Q62702-A918
Manufacturer	Siemens Semiconductor Group
Description	Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching)
Published	Apr 16, 2005
Detailed Description	Silicon Schottky Diode BAT 17-07 q q For mixer applications in the VHF/UHF range For high-speed switching Type Orde...
Datasheet	Q62702-A918 PDF File

Overview

Silicon Schottky Diode BAT 17-07 q q For mixer applications in the VHF/UHF range For high-speed switching Type Ordering Code (tape and reel) Q62702-A918 Pin Configuration 1 2 3 4 C1 C2 A2 A1 Marking Package BAT 17-07 57 SOT-143 Maximum Ratings Parameter Reverse voltage Forward current Total power dissipation TS ≤ 60 °C Junction temperature Operating temperature range Storage temperature range Thermal Resistance Junction-ambient1) Junction-soldering point Symbol Values 4 130 150 150 – 55 … + 150 – 55 … + 150 Unit V mA mW °C °C °C VR IF Ptot Tj Top Tstg Rth JA Rth JS ≤ 750 ≤ 590 K/W K/W 1) Package mounted on epoxy pcb 40 mm x 40 mm x 1.
5 mm/1cm2 Cu.
Semiconductor Group 1 10.
94 BAT 17-07 Electrical Characteristics at TA = 25 °C, unless otherwise specified.
Parameter Symbol min.
DC Characteristics Breakdown voltage IR = 10 µA Reverse current VR = 3 V VR = 3 V, TA = 60 °C VR = 4 V Forward voltage IF = 0.
1 mA IF = 1 mA IF = 10 mA Diode capacitance VR = 0 V f = 1 MHz Differential forward resistance IF = 5 mA, f = 10 kHz Value typ.
max.
Unit V(BR) 4 – – – – 275 340 425 0.
75 8 – V µA – – – 0.
25 1.
25 10 mV 200 750 350 350 450 600 pF – 1 Ω – 15 IR VF CT rS Semiconductor Group 2 BAT 17-07 Forward current IF = f (VF) Reverse current IR = f (VR) Diode capacitance CT = f (VR) f = 1 MHz Differential forward resistance RF = f (IF) f = 10 kHz Semiconductor Group 3 BAT 17-07 Forward current IF = f (TA; TS*) *Package mounted on aluminum Semiconductor Group 4 ...

Similar Datasheet

Q62702-A910 Silicon Switching Diodes (Switching applications High breakdown voltage) - Siemens Semiconductor Group
Q62702-A911 Silicon Switching Diodes (Switching applications High breakdown voltage) - Siemens Semiconductor Group
Q62702-A912 Silicon Switching Diodes (Switching applications High breakdown voltage) - Siemens Semiconductor Group
Q62702-A913 Silicon Switching Diodes (Switching applications High breakdown voltage) - Siemens Semiconductor Group
Q62702-A914 Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) - Siemens Semiconductor Group
Q62702-A915 Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) - Siemens Semiconductor Group
Q62702-A916 Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) - Siemens Semiconductor Group
Q62702-A917 Silicon Switching Diodes (Switching applications High breakdown voltage Common cathode) - Siemens Semiconductor Group
Q62702-A918 Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high-speed switching) - Siemens Semiconductor Group
Q62702-A919 Silicon Low Leakage Diode (Low-leakage applications Medium speed switching times Single diode) - Siemens Semiconductor Group

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)