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Q62702-A922

Siemens Semiconductor Group
Part Number Q62702-A922
Manufacturer Siemens Semiconductor Group
Description Silicon Low Leakage Diode Array (Low-leakage applications Medium speed switching times Common anode)
Published Apr 16, 2005
Detailed Description Silicon Low Leakage Diode Array Low-leakage applications q Medium speed switching times q Common anode q BAW 156 Type ...
Datasheet PDF File Q62702-A922 PDF File

Q62702-A922
Q62702-A922

Overview
Silicon Low Leakage Diode Array Low-leakage applications q Medium speed switching times q Common anode q BAW 156 Type BAW 156 Marking JZs Ordering Code (tape and reel) Q62702-A922 Pin Configuration Package1) SOT-23 Maximum Ratings Parameter Reverse voltage Peak reverse voltage Forward current Surge forward current, t = 1 µs Total power dissipation, TS = 35 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR VRM IF IFS Ptot Tj Tstg Values 70 70 200 4.
5 250 150 – 65 … + 150 Unit V mA A mW ˚C 600 460 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 1 5.
91 BAW 156 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Symbol min.
DC characteristics Breakdown voltage I(BR) = 100 µA Forward voltage IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA Reverse current VR = 70 V VR = 70 V, TA = 150 ˚C AC characteristics Diode capacitance VR = 0, f = 1 MHz Reverse recovery time IF = 10 mA, IR = 10 mA, RL = 100 Ω measured at IR = 1 mA Test circuit for reverse recovery time CD trr – – 2 0.
5 – 3 pF µs Values typ.
max.
Unit V(BR) VF 70 – – V mV – – – – IR – – – – – – – – 900 1000 1100 1250 nA 5 80 Pulse generator: tp = 5 µs, D = 0.
05 tr = 0.
6 ns, Rj = 50 Ω Oscillograph: R = 50 Ω tr = 0.
35 ns C ≤ 1 pF Semiconductor Group 2 BAW 156 Forward current IF = f (TA*; TS) * Package mounted on epoxy Reverse current IR = f (TA) Forward current IF = f (VF) TA = 25 ˚C Peak forward current IFM = f (t) Semiconductor Group 3 BAW 156 Forward voltage VF = f (TA) Semiconductor Group 4 ...


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