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Q62702-A988

Siemens Semiconductor Group
Part Number Q62702-A988
Manufacturer Siemens Semiconductor Group
Description Silicon Schottky Diode (Low-power Schottky rectifier diode)
Published Apr 16, 2005
Detailed Description Silicon Schottky Diode Preliminary Data Low-power Schottky rectifier diode q For low-loss, fast-recovery rectification, ...
Datasheet PDF File Q62702-A988 PDF File

Q62702-A988
Q62702-A988

Overview
Silicon Schottky Diode Preliminary Data Low-power Schottky rectifier diode q For low-loss, fast-recovery rectification, meter protection, bias isolation and clamping purposes q BAT 66-05 Type BAT 66-05 Marking BAT 66-05 Ordering Code (tape and reel) Q62702-A988 Pin Configuration Package1) SOT-223 Maximum Ratings Parameter Reverse voltage Forward current Average forward current, 50 Hz Surge forward current, t ≤ 10 ms Total power dissipation, TS ≤ 126 ˚C Junction temperature Storage temperature range Thermal Resistance Junction - ambient2) Junction - soldering point Rth JA Rth JS ≤ ≤ Symbol VR IF IFAV IFSM Ptot Tj Tstg Values 40 2 1 10 1.
2 150 – 55 … + 150 Unit V A W ˚C 160 20 K/W 1) 2) For detailed information see chapter Package Outlines.
Package mounted on epoxy pcb 40 mm × 40 mm × 1.
5 mm/6 cm2 Cu.
Semiconductor Group 1 5.
91 BAT 66-05 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Reverse current VR = 25 V VR = 25 V, TA = 85 ˚C Forward voltage IF = 10 mA IF = 100 mA IF = 1 A Diode capacitance VR = 10 V, f = 1 MHz Symbol min.
IR – – VF – – – CT – 0.
28 0.
35 0.
47 30 0.
35 – 0.
60 40 pF – – 10 1 Values typ.
max.
µA mA Unit V Forward current IF = f (VF) Reverse current IR = f (VR) Semiconductor Group 2 BAT 66-05 Forward current IF = f (TA*; TS) * Package mounted on epoxy Semiconductor Group 3 ...


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