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BU2727AF

NXP
Part Number BU2727AF
Manufacturer NXP
Description Silicon Diffused Power Transistor
Published Apr 17, 2005
Detailed Description Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High vol...
Datasheet PDF File BU2727AF PDF File

BU2727AF
BU2727AF

Overview
Philips Semiconductors Product specification Silicon Diffused Power Transistor BU2727AF GENERAL DESCRIPTION High voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in horizontal deflection circuits of high resolution monitors.
Designed to withstand VCES pulses up to 1700V.
QUICK REFERENCE DATA SYMBOL VCESM VCEO IC ICM Ptot VCEsat ICsat ts PARAMETER Collector-emitter voltage peak value Collector-emitter voltage (open base) Collector current (DC) Collector current peak value Total power dissipation Collector-emitter saturation voltage Collector saturation current Storage time CONDITIONS VBE = 0 V TYP.
5.
0 2.
5 MAX.
1700 825 12 30 45 1.
0 3.
0 UNIT V V A A W V A µs Ths ≤ 25 ˚C IC = 5.
0 A; IB = 0.
91 A f = 64 kHz ICsat = 5.
0 A; f = 64 kHz PINNING - SOT199 PIN 1 2 3 base collector emitter DESCRIPTION PIN CONFIGURATION case SYMBOL c b 1 2 3 case isolated e LIMITING VALUES Limiting values in accordance with the Absolute Maximum Rating System...


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