DatasheetsPDF.com

BU2727DX

Inchange Semiconductor
Part Number BU2727DX
Manufacturer Inchange Semiconductor
Description SILICON POWER TRANSISTOR
Published May 13, 2009
Detailed Description INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727DX www.datasheet4u.com DESC...
Datasheet PDF File BU2727DX PDF File

BU2727DX
BU2727DX

Overview
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU2727DX www.
datasheet4u.
com DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Ddamper Ddiode APPLICATIONS ·Designed for use in horizontal deflection circuits of high resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCES Collector- Emitter Voltage(VBE= 0) 1700 V VCEO Collector-Emitter Voltage 825 V VEBO Emitter-Base Voltage 7.
5 V IC ICM Collector Current- Continuous 12 A Collector Current-Peak 30 A IB B Base Current- Continuous 12 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ Junction Temperature 20 A PC 45 W ℃ ℃ TJ 150 Tstg Storage Temperature Range -65~150 SYMBOL PARAMETER Thermal Resistance,Junction to Case MAX 2.
8 UNIT ℃/W Rth j-c isc Website：www.
iscsemi.
cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS www.
datasheet4u.
com BU2727DX TC=...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)