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BUH315

ST Microelectronics
Part Number BUH315
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description ® BUH315 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE ...
Datasheet PDF File BUH315 PDF File

BUH315
BUH315

Overview
® BUH315 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.
L.
RECOGNISED ISOWATT218 PACKAGE (U.
L.
FILE # E81734 (N)).
APPLICATIONS: s HORIZONTAL DEFLECTION FOR COLOUR TV s SWITCH MODE POWER SUPPLIES 3 2 1 ISOWATT218 DESCRIPTION The BUH315 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max.
Operating Junction Temperature o Value 1500 700 10 6 12 3 5 44 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 November 1999 BUH315 THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.
8 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Test Cond ition s V CE = 1500 V V EB = 5 V I C = 100 mA 700 Min.
Typ .
Max.
200 100 Un it µA µA V V CEO(sus )∗ Collector-Emitter Sustaining Voltage (I B = 0) V EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Emitter-Base Voltage (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time I E = 10 mA IC = 3 A IC = 3 A IC = 3 A IC = 3 A I B = 0.
75 A I B = 0.
75 A V CE = 5 V V CE = 5 V 10 1.
5 1.
3 6 3.
5 1.
6 110 3.
5 340 12 V V V T j = 100 C o ts tf ts tf V CC = 400 V I B1 = 0.
75 A IC = 3 A I B1 = 0.
75 A IC = 3 A IB2 = 1.
5 A 2.
4 200 µs ns µs ns f = 15625 Hz IB2 = ...


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