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BUH315D

Inchange Semiconductor
Part Number BUH315D
Manufacturer Inchange Semiconductor
Description Silicon NPN Power Transistor
Published Aug 28, 2009
Detailed Description www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUH315D DESCR...
Datasheet PDF File BUH315D PDF File

BUH315D
BUH315D


Overview
www.
DataSheet4U.
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUH315D DESCRIPTION ·High Switching Speed ·High Voltage ·Built-in Integrated Diode APPLICATIONS ·Designed for use in horizontal deflection circuits in TV’s and monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB B PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current-Continuous Collector Current-Peak Base Current Base Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature Storage Temperature VALUE 1500 700 10 6 12 3 5 44 150 -65~150 UNIT V V V A A A A W ℃ ℃ IBM PC TJ Tstg THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal Resistance, Junction to Case MAX 2.
8 UNIT ℃/W isc Website:www.
iscsemi.
cn www.
DataSheet4U.
com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN BUH315D TYP MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA ;IB= 0,L= 25mH 700 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.
5 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 1A B 1.
5 V IEBO Emitter Cutoff Current VEB= 5V; IC=0 300 mA ICES Collector Cutoff Current VCE= 1500V;VBE= 0 IC= 3A ; VCE= 5V IC= 3A ; VCE= 5V;TC=100℃ IF= 3A 4 2.
5 0.
2 9 mA hFE DC Current Gain VECF C-E Diode Forward Voltage 2.
5 V Switching Times; Resistive Load ts Storage Time IC= 3A;IB1= 1A; IB2= -1.
5A VCC= 400V 1.
8 2.
7 μs tf Fall Time 0.
2 0.
3 μs isc Website:www.
iscsemi.
cn ...



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