DatasheetsPDF.com

BUH315D

ST Microelectronics
Part Number BUH315D
Manufacturer ST Microelectronics
Description HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR
Published Apr 17, 2005
Detailed Description ® BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLT...
Datasheet PDF File BUH315D PDF File

BUH315D
BUH315D

Overview
® BUH315D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR s s s s STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY U.
L.
RECOGNISED ISOWATT218 PACKAGE (U.
L.
FILE # E81734 (N)) NPN TRANSISTOR WITH INTEGRATED FREEWHEELING DIODE.
3 2 1 APPLICATIONS s HORIZONTAL DEFLECTION FOR COLOUR TV DESCRIPTION The BUH315D is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollow Emitter structure to enhance switching speeds.
The BUH series is designed for use in horizontal deflection circuits in televisions and monitors.
ISOWATT218 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CBO V CEO V EBO IC I CM IB I BM P t ot T stg Tj Parameter Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Base Peak Current (tp < 5 ms) Total Dissipation at Tc = 25 C St orage Temperature Max.
Operating Junction Temperature o Value 1500 700 10 6 12 3 5 44 -65 to 150 150 Uni t V V V A A A A W o o C C 1/7 December 1999 BUH315D THERMAL DATA R t hj-ca se Thermal Resistance Junction-case Max 2.
8 o C/W ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified) Symb ol I CES I EBO V CE(sat )∗ V BE(s at)∗ h F E∗ Parameter Collector Cut-off Current (V BE = 0) Emitter Cut-off Current (I C = 0) Collector-Emitter Saturation Voltage Base-Emitt er Saturation Voltage DC Current Gain RESISTIVE LO AD Storage Time Fall Time INDUCTIVE LO AD Storage Time Fall Time Test Cond ition s V CE = 1500 V V EB = 5 V IC = 3 A IC = 3 A IC = 3 A IC = 3 A IB = 1 A IB = 1 A V CE = 5 V V CE = 5 V 4 2.
5 1.
8 200 2.
7 350 Min.
Typ .
Max.
200 300 1.
5 1.
5 9 Un it µA mA V V T j = 100 C o ts tf ts tf V CC = 400 V I B1 = 1 A IC = 3 A I B1 = 1 A IC = 3 A I B2 = -1.
5 A 2.
7 300 µs ns µs ns f = 15625 Hz IB2 = 1.
5 A π  V c eflybac k = 1050 sin  106 t 5   V VF Diode F orward Voltage I F = 3 A 2.
5 V ∗ Pulsed: Pulse duration...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)