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MA3J745E

Panasonic
Part Number MA3J745E
Manufacturer Panasonic
Description Silicon epitaxial planar type
Published Apr 27, 2005
Detailed Description Schottky Barrier Diodes (SBD) MA3J745E Silicon epitaxial planar type Unit : mm For switching circuits 0.425 2.1 ± 0.1...
Datasheet PDF File MA3J745E PDF File

MA3J745E
MA3J745E

Overview
Schottky Barrier Diodes (SBD) MA3J745E Silicon epitaxial planar type Unit : mm For switching circuits 0.
425 2.
1 ± 0.
1 1.
25 ± 0.
1 0.
425 + 0.
1 2.
0 ± 0.
2 1.
3 ± 0.
1 0.
65 0.
65 I Absolute Maximum Ratings Ta = 25°C Parameter Reverse voltage (DC) Peak reverse voltage Forward current (DC) Peak forward current Single Double* Single Double* Tj Tstg IFM Symbol VR VRM IF Rating 30 30 30 20 150 110 125 −55 to +125 °C °C mA Unit V V mA 0.
9 ± 0.
1 1 : Anode 1 2 : Anode 2 3 : Cathode 1, 2 EIAJ : SC-70 Flat S-Mini Type Package (3-pin) Marking Symbol: M3D Internal Connection 1 3 2 Junction temperature Storage temperature Note) * : Value per chip I Electrical Characteristics Ta = 25°C Parameter Reverse current (DC) Forward voltage (DC) Symbol IR VF1 VF2 Terminal capacitance Reverse recovery time* Detection efficiency Ct trr η VR = 30 V IF = 1 mA IF = 30 mA VR = 1 V, f = 1 MHz IF = IR = 10 mA Vin = 3 V(peak), f = 30 MHz 1.
5 1.
0 65 Conditions Min Typ Max 50 0.
3 1.
0 Unit µA V V pF ns % Note) 1.
Schottky barrier diode is sensitive to electric shock (static electricity, etc.
).
Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment.
2.
Rated input/output frequency: 2 000 MHz 3.
* : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 1 mA IF = 10 mA IR = 10 mA RL = 100 Ω Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 Ω W.
F.
Analyzer (SAS-8130) Ri = 50 Ω 90% tp = 2 µs tr = 0.
35 ns δ = 0.
05 0.
15 − 0.
05 • Two elements are contained in the (small S-mini type package), resulting in allowing high-density mounting • Optimum for low-voltage rectification because of its low forward rise voltage (VF) • Optimum for high-frequency rectification because of its short reverse recovery time (trr) 1 3 2 + 0.
1 0.
3 − 0 I Features 1 MA3J745E IF  V F 103 1.
0 Schottky Barrier Diodes (SBD) VF  Ta 104 Ta = 125°C 0.
8 IR  VR 102 75°C 25°C − 20°C Forward current IF (mA) Forward voltage VF (...


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