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PHP1035

NXP
Part Number PHP1035
Manufacturer NXP
Description P-channel enhancement mode MOS transistor
Published Mar 22, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File und...
Datasheet PDF File PHP1035 PDF File

PHP1035
PHP1035

Overview
DISCRETE SEMICONDUCTORS DATA SHEET PHP1035 P-channel enhancement mode MOS transistor Preliminary specification File under Discrete Semiconductors, SC13b 1998 Feb 18 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor FEATURES • Very low RDSon • High-speed switching • No secondary breakdown • Direct interface to C-MOS, TTL, etc.
APPLICATIONS • Power management • DC-DC converters • General purpose switch.
DESCRIPTION P-channel enhancement mode MOS transistor in an 8-pin SOT96-1 (SO8) SMD plastic package.
CAUTION The device is supplied in an antistatic package.
The gate-source input must be protected against static discharge during transport or handling.
1 Top view 4 handbook, halfpage 8 PHP1035 PINNING - SOT96-1 (SO8) PIN 1 2 3 4 5 6 7 8 SYMBOL s s s g d d d d source source source gate drain drain drain drain DESCRIPTION 5 d g s MAM398 Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VSD VGSO VGSth ID RDSon Ptot PARAMETER drain-source voltage (DC) source-drain diode forward voltage gate-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance total power dissipation IS = −1.
25 A; VGD = 0 open drain ID = −1 mA; VDS = VGS Ts = 80 °C ID = −4 A; VGS = −10 V Ts = 80 °C CONDITIONS − − − −1 − − − MIN.
MAX.
−30 −1.
3 ±20 − −8 35 4 V V V V A mΩ W UNIT 1998 Feb 18 2 Philips Semiconductors Preliminary specification P-channel enhancement mode MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGSO ID IDM Ptot PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation open drain Ts = 80 °C; note 1 note 2 Ts = 80 °C Tamb = 25 °C; note 3 Tamb = 25 °C; note 4 Tstg Tj IS ISM Notes 1.
Ts is the temperature at the soldering point of the drain lead.
2.
Pulse width and duty cycle limited by maximum junction temperature.
3.
Device mounted on a printed-circu...


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