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PHT6N06T

NXP
Part Number PHT6N06T
Manufacturer NXP
Description TrenchMOS transistor Standard level FET
Published Mar 22, 2005
Detailed Description PHT6N06T TrenchMOS™ standard level FET M3D087 Rev. 02 — 03 February 2003 Product data 1. Product profile 1.1 Descri...
Datasheet PDF File PHT6N06T PDF File

PHT6N06T
PHT6N06T

Overview
PHT6N06T TrenchMOS™ standard level FET M3D087 Rev.
02 — 03 February 2003 Product data 1.
Product profile 1.
1 Description N-channel enhancement mode field-effect transistor in a plastic package using TrenchMOS™ technology.
Product availability: PHT6N06T in SOT223.
1.
2 Features s Low on-state resistance s Fast switching s Low QGD s Surface mounting package.
1.
3 Applications s DC to DC converters s General purpose switching.
1.
4 Quick reference data s VDS ≤ 55 V s Ptot ≤ 8.
3 W s ID ≤ 5.
5 A s RDSon ≤ 150 mΩ 2.
Pinning information Table 1: Pin 1 2 3 4 Pinning - SOT223, simplified outline and symbol Description Simplified outline gate (g) drain (d) 4 source (s) drain (d) Symbol d g MBB076 s 1 2 3 Top view MSB002 - 1 SOT223 Philips Semiconductors PHT6N06T TrenchMOS™ standard level FET 3.
Limiting values Table 2: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS VDGR VGS ID drain-source voltage (DC) drain-gate voltage (DC) gate-source voltage (DC) drain current (DC) IDM peak drain current Ptot total power dissipation Tstg storage temperature Tj junction temperature Source-drain diode 25 °C ≤ Tj ≤ 150 °C 25 °C ≤ Tj ≤ 150 °C; RGS = 20 kΩ Tsp = 25 °C; VGS = 10 V; Figure 2 and 3 Tsp = 100 °C; VGS = 10 V; Figure 2 Tsp = 25 °C; pulsed; tp ≤ 10 µs; Figure 3 Tsp = 25 °C; Figure 1 IS source (diode forward) current (DC) Tsp = 25 °C ISM peak source (diode forward) current Tsp = 25 °C; pulsed; tp ≤ 10 µs Min Max Unit - 55 V - 55 V - ±20 V - 5.
5 A - 3.
8 A - 22 A - 8.
3 W −55 +150 °C −55 +150 °C - 5.
5 A - 22 A 9397 750 10633 Product data Rev.
02 — 03 February 2003 © Koninklijke Philips Electronics N.
V.
2003.
All rights reserved.
2 of 12 Philips Semiconductors PHT6N06T TrenchMOS™ standard level FET 120 Pder (%) 80 03aa17 120 Ider (%) 80 03aa25 40 40 0 0 50 100 Pder = -------P----t--o---t------P × 100% t o t ( 25 °C ) 150 ...


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