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MG100Q2YS42

Toshiba
Part Number MG100Q2YS42
Manufacturer Toshiba
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 MG100Q2YS42 High Power Switching Applications Motor Control Appl...
Datasheet PDF File MG100Q2YS42 PDF File

MG100Q2YS42
MG100Q2YS42

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS42 MG100Q2YS42 High Power Switching Applications Motor Control Applications l High input impedance l High speed : tf = 0.
5µs (max) trr = 0.
5µs (max) l Low saturation voltage : VCE (sat) = 4.
0V (max) l Enhancement-mode l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit JEDEC JEITA TOSHIBA Weight: 430g (typ.
) Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC ICP IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 100 200 100 200 700 150 −40 ~ 125 2500 (AC 1 min.
) 3/3 Unit V V A A W °C °C V N·m ― ― 2-109C1A 1 2001-08-16 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current ...


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