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MG100Q2YS51

Toshiba
Part Number MG100Q2YS51
Manufacturer Toshiba
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 MG100Q2YS51 High Power Switching Applications Motor Control Appl...
Datasheet PDF File MG100Q2YS51 PDF File

MG100Q2YS51
MG100Q2YS51

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS51 MG100Q2YS51 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
3µs (Max) @Inductive load l Low saturation voltage : VCE (sat) = 3.
6V (Max) l Enhancement-mode l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit Maximum Ratings (Ta = 25°C) JEDEC EIAJ TOSHIBA Weight: 430g Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC (25°C / 80°C) ICP (25°C / 80°C) IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 150 / 100 300 / 200 100 200 660 150 −40 ~ 125 2500 (AC 1 min.
) 3/3 Unit V V A A W °C °C V N·m ― ― 2-109C4A 1 2001-04-16 MG100Q2YS51 Electrical Characteristics (Ta = 25°C) Characteristic Symbol Test Condition Min Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter Saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Forward voltage Reverse recovery time Thermal resistance IGES ICES VGE (off) VCE (sat) Cies td(on) tr ton td(off) tf toff VF trr Rth (j-c) VGE = ±20V, VCE = 0 VCE = 1200V, VGE = 0 IC = 100mA, VCE = 5A IC = 100A, VGE = 15V Tj = 25°C Tj = 125°C VCE = 10V, VGE = 0, f = 1MHz Inductive load VCC = 600V IC = 100A VGE = ±15V RG = 9.
1Ω (Note 1) IF = 100A, VGE = 0 IF = 100A, VGE = −10V di / dt = 700A / µs Transistor stage Diode stage (Note 1) ― ― 3.
0 ― ― ― ― ― ― ― ― ― ― ― ― ― Note 1: Switching time and reverse recovery time test circuit & timing chart Typ.
Max Unit ― ±500 nA ― 2.
0 mA ― 6.
0 V 2.
8 3.
6 3.
1 4.
0 V 12.
0 ― nF 0.
05 ― 0.
05 ― 0.
2 ― µs 0.
5 ― 0.
1 0.
3 0.
6 ― 2.
4 3.
5 V 0.
1 0.
25 µs ― 0.
16 °C / W ...


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