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MG100Q2YS50

Toshiba
Part Number MG100Q2YS50
Manufacturer Toshiba
Description N CHANNEL IGBT (HIGH PWER SWITCHING / MOTOR CONTROL APPLICATIONS)
Published Apr 29, 2005
Detailed Description TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS50 MG100Q2YS50 High Power Switching Applications Motor Control Appl...
Datasheet PDF File MG100Q2YS50 PDF File

MG100Q2YS50
MG100Q2YS50

Overview
TOSHIBA GTR Module Silicon N Channel IGBT MG100Q2YS50 MG100Q2YS50 High Power Switching Applications Motor Control Applications Unit: mm l High input impedance l High speed : tf = 0.
3µs (Max) @Inductive Load l Low saturation voltage : VCE (sat) = 3.
6V (Max) l Enhancement-mode l Includes a complete half bridge in one package.
l The electrodes are isolated from case.
Equivalent Circuit JEDEC EIAJ TOSHIBA Weight: 255g Maximum Ratings (Ta = 25°C) Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Forward current DC 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Isolation voltage Screw torque (Terminal / mounting) Symbol VCES VGES IC (25°C / 80°C) ICP (25°C / 80°C) IF IFM PC Tj Tstg VIsol ― Rating 1200 ±20 150 / 100 300 / 200 100 200 660 150 −40 ~ 125 2500 (AC 1 min.
) 3/3 Unit V V A A W °C °C V N·m ― ― 2-95A4A 1 2001-04-20 MG100Q2YS50 Electrical Characteristics (Ta = 25°C) Characteristic ...


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