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MJE3055T

Part Number	MJE3055T
Manufacturer	Fairchild
Description	NPN Silicon Transistor
Published	May 7, 2005
Detailed Description	MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain...
Datasheet	MJE3055T PDF File

Overview

MJE3055T MJE3055T General Purpose and Switching Applications • DC Current Gain Specified to IC =10A • High Current Gain-Bandwidth Product : fT = 2MHz (Min.
) 1 TO-220 2.
Collector 3.
Emitter 1.
Base NPN Silicon Transistor Absolute Maximum Ratings TC=25°C unless otherwise noted Symbol VCBO VCEO VEBO IC IB PC PC TJ TSTG Parameter Collector -Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Collector Dissipation (TC=25°C) Collector Dissipation (Ta=25°C) Junction Temperature Storage Temperature Value 70 60 5 10 6 75 0.
6 150 - 55 ~ 150 Units V V V A A W W °C °C Electrical Characteristics TC=25°C unless otherwise noted Symbol BVCEO ICEO ICEX1 ICEX2 IEBO h...

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