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NE662M16

NEC
Part Number NE662M16
Manufacturer NEC
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Published May 7, 2005
Detailed Description NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.1 dB at...
Datasheet PDF File NE662M16 PDF File

NE662M16
NE662M16

Overview
NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.
1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M16 PACKAGE: • Flat Lead Style with a height of just 0.
50mm NE662M16 DESCRIPTION The NE662M16 is fabricated using NEC's UHS0 25 GHz fT wafer process.
With a typical transition frequency of 25 GHz the NE662M16 is usable in applications from 100 MHz to over 10 GHz.
The NE662M16 provides excellent low voltage/low current performance.
NEC's new low profile/flat lead style "M16" package is ideal for today's portable wireless applications.
The NE662M16 is an ideal choice for LNA and oscillator requirements in a...


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