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NE662M04

CEL
Part Number NE662M04
Manufacturer CEL
Description NPN SILICON HIGH FREQUENCY TRANSISTOR
Published Jul 28, 2007
Detailed Description www.DataSheet4U.com NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAI...
Datasheet PDF File NE662M04 PDF File

NE662M04
NE662M04

Overview
www.
DataSheet4U.
com NPN SILICON RF TRANSISTOR NE662M04 NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • • • • HIGH GAIN BANDWIDTH: fT = 25 GHz LOW NOISE FIGURE: NF = 1.
1 dB at 2 GHz HIGH MAXIMUM STABLE GAIN: 20 dB at f = 2 GHz NEW LOW PROFILE M04 PACKAGE: • SOT-343 footprint, with a height of just 0.
59 mm • Flat Lead Style for better RF performance M04 DESCRIPTION NEC's NE662M04 is fabricated using NEC's UHS0 25 GHz fT wafer process.
With a typical transition frequency of 25 GHz the NE662M04 is usable in applications from 100 MHz to 10 GHz.
The NE662M04 provides excellent low voltage/low current performance.
NEC's new low profile/flat lead style "M04" package is ideal for today's portable...


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