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MMBT5551

Fairchild
Part Number MMBT5551
Manufacturer Fairchild
Description NPN General Purpose Amplifier
Published May 9, 2005
Detailed Description 2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 2N5551 / MMBT5551 NPN General-Purpose Amplifier Descripti...
Datasheet PDF File MMBT5551 PDF File

MMBT5551
MMBT5551


Overview
2N5551 / MMBT5551 — NPN General-Purpose Amplifier August 2018 2N5551 / MMBT5551 NPN General-Purpose Amplifier Description This device is designed for general-purpose high-voltage amplifiers and gas discharge display drivers.
2N5551 TO-92 Ordering Information Part Number 2N5551TA 2N5551TFR 2N5551TF 2N5551BU MMBT5551 Top Mark 5551 5551 5551 5551 3S MMBT5551 3 2 1 SOT-23 Marking: 3S 1.
Base 2.
Emitter 3.
Collector Package TO-92 3L TO-92 3L TO-92 3L TO-92 3L SOT-23 3L Packing Method Ammo Tape and Reel Tape and Reel Bulk Tape and Reel © 2009 Semiconductor Components Industries, LLC 2N5551 / MMBT5551 Rev.
2 1 www.
onsemi.
com 2N5551 / MMBT5551 — NPN General-Purpose Amplifier Absolute Maximum Ratings(2) Stresses exceeding the absolute maximum ratings may damage the device.
The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Values are at TA = 25°C unless otherwise noted.
Symbol Parameter Value Units VCEO VCBO VEBO IC TJ, Tstg(2) Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector current - Continuous Junction and Storage Temperature 160 180 6 600 -55 to +150 V V V mA °C Notes: 2.
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
3.
These ratings are based on a maximum junction temperature of 150 °C.
These are steady-state limits.
Fairchild Semiconductor should be consulted on applications involving pulsed or low-duty cycle operations.
Thermal Characteristics Values are at TA = 25°C unless otherwise noted.
Symbol Parameter PD RθJC RθJA Total Device Dissipation Derate above 25°C Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Maximum 2N5551 MMBT5551 625 350 5.
0 2.
8 83.
...


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