DatasheetsPDF.com

NTE2971

NTE
Part Number NTE2971
Manufacturer NTE
Description MOSFET N-Channel / Enhancement Mode High Speed Switch
Published May 9, 2005
Detailed Description NTE2971 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D ...
Datasheet PDF File NTE2971 PDF File

NTE2971
NTE2971

Overview
NTE2971 MOSFET N–Channel, Enhancement Mode High Speed Switch Applications: D SMPS D DC–DC Converter D Battery Charger D Power Supply of Printer D Copier D HDD, FDD, TV, VCR D Personal Computer Absolute Maximum Ratings: (TC = +25°C unless otherwise specified) Drain–Source Voltage (VGS = 0V), VDSS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
600V Gate–Source Voltage (VDS = 0V), VGS .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
±30V Drain Current, ID Continuous .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
20A Pulsed .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
60A Maximum Power Dissipation, PD .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
275W Channel Temperature Range, Tch .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +150°C Storage Temperature Range, Tstg .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
–55° to +150°C Thermal Resistance, Channel–to–Case, Rth(ch–c) .
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
.
0.
45°C/W Electrical Characteristics: (Tch = +25°C unless otherwise specified) Parameter Drain–Source Breakdown Voltage Gate–Source Breakdown Voltage Gate–Source Leakage Zero Gate Voltage Drain Current Gate Threshold Voltage Static Drain–Source ON Resistance Drain–Source On–State Voltage Forward Transfer Admittance Symbol Test Conditions Min 600 ±30 – – 2.
0 – – 8 Typ – – – – 3.
0 0.
33 3.
3 13 Max – – ±10 1.
0 4.
0 0.
43 4.
3 – Unit V V µA mA V Ω V S V(BR)DSS VDS = 0V, ID = 1mA V(BR)GSS VDS = 0V, IG = ±100µA IGSS IDSS VGS(th) RDS(on) VDS(on) |yfs| VGS = ±25V, VDS = 0V VDS = 600V, VGS = 0 VDS = 10V, ID = 1mA VGS = 10V, ID = 10A VGS = 10V, ID =...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)