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NDS9405

ETC
Part Number NDS9405
Manufacturer ETC
Description single P-Channel MOSFET
Published Oct 13, 2015
Detailed Description N NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor February 1996 General Description These P-Channel ...
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NDS9405
NDS9405

Overview
N NDS9405 Single P-Channel Enhancement Mode Field Effect Transistor February 1996 General Description These P-Channel enhancement mode power field effect transistors are produced using National's proprietary, high cell density, DMOS technology.
This very high density process is been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulses in the avalanche and commutation modes.
These devices are particularly suited for low voltage applications such as notebook computer power management and other battery powered circuits where fast switching, low in-line power loss, and resistance to transients are needed.
Features -4.
3A, -20V.
RDS(ON) = 0.
10Ω @ VGS = -10V High density cell design for extremely low RDS(ON) High power and current handling capability in a widely used surface mount package.
____________________________________________________________________________________ 54 63 72 81 Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous TA = 25°C - Continuous TA = 70°C - Pulsed TA = 25°C Maximum Power Dissipation (Note 1a) (Note 1a) (Note 1a) (Note 1b) (Note 1c) TJ,TSTG Operating and Storage Temperature Range THERMAL CHARACTERISTICS RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) NDS9405 -20 ± 20 ± 4.
3 ± 3.
3 ± 20 2.
5 1.
2 1 -55 to 150 50 25 Units V V A W °C °C/W °C/W NDS9405.
SAM Electrical Characteristics (TA = 25°C unless otherwise noted) Symbol Parameter Conditions OFF CHARACTERISTICS BVDSS IDSS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current VGS = 0 V, ID = -250 µA VDS = -16 V, VGS = 0 V IGSSF Gate - Body Leakage, Forward IGSSR Gate - Body Leakage, Reverse ON CHARACTERISTICS (Note 2) VGS(th) Gate Threshold Voltage VGS = 20 V, VDS = 0 V VGS = -20 V, VDS= 0 V VDS = VGS, ID = -250 µA RDS(ON) ...


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