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BB112

Siemens Group
Part Number BB112
Manufacturer Siemens Group
Description Silicon Variable Capacitance Diode (For AM tuning applications Specified tuning range 1 8.0 V)
Published Jun 3, 2005
Detailed Description BB 112 Silicon Variable Capacitance Diode q q BB 112 For AM tuning applications Specified tuning range 1 … 8.0 V Typ...
Datasheet PDF File BB112 PDF File

BB112
BB112

Overview
BB 112 Silicon Variable Capacitance Diode q q BB 112 For AM tuning applications Specified tuning range 1 … 8.
0 V Type BB 112 Marking – Ordering Code Pin Configuration Q62702-B240 Package1) TO-92 Maximum Ratings Parameter Reverse voltage Forward current, TA ≤ 60 ˚C Operating temperature range Symbol VR IF Top Values 12 50 – 55 … + 85 Unit V mA ˚C 1) For detailed information see chapter Package Outlines.
Semiconductor Group 1 07.
94 BB 112 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified.
Parameter Reverse current VR = 10 V VR = 10 V, TA = 60 ˚C Diode capacitance, f = 1 MHz VR = 1 V VR = 8 V Capacitance ratio VR = 1 V, 8 V Series resistance VR = 1 V, f = 0.
5 MHz Q factor VR = 1 V, f = 0.
5 MHz Temperature coefficient of diode capacitance VR = 1 V, f = 1 MHz Capacitance matching VR = 1 … 8 V Symbol min.
IR – – CT 440 17.
5 CT1 CT8 rs Q TCC 15 – – – 470 – – 1.
4 480 500 520 34 – – – – – Ω – ppm/K – – 50 200 pF Values typ.
max.
nA Unit ∆CT – – 3 % C T Semiconductor Group 2 BB 112 Diode capacitance CT = f (VR) Capacitance ratio CT/CTref = f (VR) Capacitance ratio CT/CT1V = f (VR) Temperature coefficient of junction capacitance TCC = f (VR) Semiconductor Group 3 ...


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