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IRFS4410

IRF
Part Number IRFS4410
Manufacturer IRF
Description Power MOSFET
Published Aug 16, 2005
Detailed Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet PDF File IRFS4410 PDF File

IRFS4410
IRFS4410

Overview
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96902A IRFB4410 IRFS4410 IRFSL4410 HEXFET® Power MOSFET D VDSS RDS(on) typ.
max.
S ID 100V 8.
0m: 10m: 96A G DS TO-220AB IRFB4410 G DS D2Pak IRFS4410 G DS TO-262 IRFSL4410 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V IDM Pulsed Drain Current d PD @TC = 25°C Maximum Power Dissipation Linear Derating Factor VGS Gate-to-Source Voltage dv/dt Peak Diode Recovery f TJ Operating Junction and TSTG Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics EAS (Thermally limited) Single Pulse Avalanche Energy e IAR Avalanche Current c EAR Repetitive Avalanche Energy g Thermal Resistance Symbol Parameter RθJC Junction-to-Case k RθCS Case-to-Sink, Flat Greased Surface , TO-220 RθJA Junction-to-Ambient, TO-220 k RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk www.
irf.
com Max.
96c 68c 380 250 1.
6 ± 20 19 -55 to + 175 300 10lbxin (1.
1Nxm) 220 See Fig.
14, 15, 16a, 16b Typ.
––– 0.
50 ––– ––– Max.
0.
61 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 11/4/04 IRFB4410/IRFS4410/IRFSL4410 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage 100 ––– ––– ––– 0.
094 ––– ––– 8.
0 10 2.
0 ––– 4.
0 ––– ––– 20 ––– ––– 250 ––– ––– 200 V VGS = ...


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