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IRFS3307


Part Number IRFS3307
Manufacturer IRF
Title Power MOSFET
Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and H...
Features Thermally limited) Single Pulse Avalanche Energy ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak ...

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IRFS3306 : isc N-Channel MOSFET Transistor ·FEATURES ·With TO-263( D2PAK ) packaging ·High speed switching ·Low gate input resistance ·Standard level gate drive ·Easy to use ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Power supply ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 60 VGSS ID IDM Gate-Source Voltage Drain Current-Continuous;Tc=25℃ Tc=100℃ Drain Current-Single Pulsed ±20 160 110 620 PD Total Dissipation 230 Tj Operating Junction Temperature 175 Tstg Storage Temperature -55~175 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAM.

IRFS3306PBF : Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits G D Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free l RoHS Compliant, Halogen-Free S D DS G TO-220AB IRFB3306PbF IRFB3306PbF IRFS3306PbF IRFSL3306PbF HEXFET® Power MOSFET VDSS RDS(on) typ. max. ID (Silicon Limited) 60V 3.3m: 4.2m: c160A ID (Package Limited) 120A D D DS G D2Pak IRFS3306PbF DS G TO-262 IRFSL3306PbF G Gate D D ra in S Source Base Part Number Package Type Standard P.

IRFS3307 : Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ. max. S ID 75V 5.0m: 6.3m: 130A GDS TO-220AB IRFB3307 GDS D2Pak IRFS3307 GDS TO-262 IRFSL3307 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V dContinuous Drain Current, VGS @ 10V Pulsed Drain.

IRFS3307PbF : Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability l Lead-Free PD - 95706D IRFB3307PbF IRFS3307PbF IRFSL3307PbF HEXFET® Power MOSFET D VDSS RDS(on) typ. 75V 5.0m: :G max. 6.3m S ID 120A GDS TO-220AB IRFB3307PbF GDS D2Pak IRFS3307PbF GDS TO-262 IRFSL3307PbF Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Continuous Drain Current, VGS @ 10V dCont.

IRFS3307ZPBF : Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability PD - 97214D IRFB3307ZPbF IRFS3307ZPbF IRFSL3307ZPbF HEXFET® Power MOSFET D VDSS 75V RDS(on) typ. 4.6mΩ cmax. 5.8mΩ G ID (Silicon Limited) 128A S ID (Package Limited) 120A D DD S D G TO-220AB IRFB3307ZPbF S G D2Pak IRFS3307ZPbF S D G TO-262 IRFSL3307ZPbF G Gate D Drain S Source Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C Conti.

IRFS3307ZTRL : ·Drain Current ID=120A@ TC=25℃ ·Drain Source Voltage- : VDSS= 75V(Min) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Power switching application ·Hard switched and high frequency circuits ·Uninterruptible power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL ARAMETER VALUE UNIT VDSS Drain-Source Voltage (VGS=0) 75 V VGS Gate-Source Voltage ±20 V ID Drain Current-continuous@ TC=25℃ 120 A Ptot Total Dissipation@TC=25℃ 230 W Tj Max. Operating Junction Temperature -55~175 ℃ Tstg Storage Temperature Range THERMAL CHARACTERISTICS SYMBOL PARAMETER -55~175 ℃ MAX UNIT Rth j-c Thermal Resistance,Juncti.




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