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IRFS3307

IRF
Part Number IRFS3307
Manufacturer IRF
Description Power MOSFET
Published Aug 16, 2005
Detailed Description Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switc...
Datasheet PDF File IRFS3307 PDF File

IRFS3307
IRFS3307

Overview
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dV/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dV/dt and dI/dt Capability G PD - 96901C IRFB3307 IRFS3307 IRFSL3307 HEXFET® Power MOSFET D VDSS RDS(on) typ.
max.
S ID 75V 5.
0m: 6.
3m: 130A GDS TO-220AB IRFB3307 GDS D2Pak IRFS3307 GDS TO-262 IRFSL3307 Absolute Maximum Ratings Symbol Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C Continuous Drain Current, VGS @ 10V dContinuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor VGS dv/dt Gate-to-Source Voltage fPeak Diode Recovery TJ TSTG Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.
6mm from case) Mounting torque, 6-32 or M3 screw Avalanche Characteristics eEAS (Thermally limited) Single Pulse Avalanche Energy ÙIAR Avalanche Current gEAR Repetitive Avalanche Energy Thermal Resistance Symbol RθJC Parameter kJunction-to-Case RθCS RθJA RθJA Case-to-Sink, Flat Greased Surface , TO-220 kJunction-to-Ambient, TO-220 jkJunction-to-Ambient (PCB Mount) , D2Pak www.
irf.
com Max.
™130 91™ 510 250 1.
6 ± 20 11 -55 to + 175 300 x x10lb in (1.
1N m) 270 See Fig.
14, 15, 16a, 16b Typ.
––– 0.
50 ––– ––– Max.
0.
61 ––– 62 40 Units A W W/°C V V/ns °C mJ A mJ Units °C/W 1 01/20/06 IRFB3307/IRFS3307/IRFSL3307 Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter Min.
Typ.
Max.
Units Conditions V(BR)DSS ∆V(BR)DSS/∆TJ RDS(on) VGS(th) IDSS Drain-to-Source Breakdown Voltage Breakdown Voltage Temp.
Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Drain-to-Source Leakage Current IGSS Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage RG Gate Input Resistance 75 ––– ––– ––– 0.
069 ––– ––– 5.
0 6.
3 V VGS = 0V, I...


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