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STP8NM60

ST Microelectronics
Part Number STP8NM60
Manufacturer ST Microelectronics
Description N-Channel MOSFET
Published Aug 31, 2005
Detailed Description STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK ...
Datasheet PDF File STP8NM60 PDF File

STP8NM60
STP8NM60

Overview
STD5NM60 STB8NM60 - STP8NM60 N-channel 650 V@Tjmax, 0.
9 Ω, 8 A MDmesh™ Power MOSFET TO-220, TO-220FP, D2PAK, DPAK, IPAK Features Type STD5NM60 STD5NM60-1 STB8NM60 STP8NM60 STP8NM60FP VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) <1Ω <1Ω <1Ω <1Ω <1Ω ID 5A 5A 5A 8A 8 A(1) Pw 96 W 96 W 100 W 100 W 30 W ■ 100% avalanche tested ■ HIgh dv/dt and avalanche capabilities ■ Low input capacitance and gate charge ■ Low gate input resistance Application ■ Switching applications Description The MDmesh™ is a new revolutionary Power MOSFET technology that associates the multiple drain process with the company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The adoption of the company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar competition’s products.
3 1 DPAK 3 1 D²PAK 3 2 1 TO-220 3 2 TO-220F1P 3 2 1 IPAK Figure 1.
Internal schematic diagram Table 1.
Device summary Order codes STD5NM60-1 STD5NM60T4 STB8NM60T4 STP8NM60 STP8NM60FP Marking D5NM60 D5NM60 B8NM60 P8NM60 P8NM60FP Package IPAK DPAK D²PAK TO-220 TO-220FP Packaging Tube Tape & reel Tape & reel Tube Tube October 2008 Rev 17 1/18 www.
st.
com 18 Electrical ratings 1 Electrical ratings STP8NM60, STD5NM60, STB8NM60 2/18 Table 1.
Absolute maximum ratings Symbol Parameter VGS Gate-source voltage ID Drain current (continuous) at TC = 25 °C ID IDM(2) Drain current (continuous) at TC=100 °C Drain current (pulsed) PTOT dv/dt(3) Total dissipation at TC = 25 °C Derating factor Peak diode recovery voltage slope VISO Insulation withstand voltage (RMS) from all three leads to external heat sink (t=1 s;TC=25 °C) TJ Operating junction temperature Tstg Storage temperature 1.
Limited only by maximum temperature allowed 2.
Pulse width limited by safe operating area 3.
ISD ≤ 5 A, di/dt ≤ 400 A/µs, VDD = 80%V(BR)DSS Value ...


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