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STP8NM60FP

STMicroelectronics
Part Number STP8NM60FP
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Dec 13, 2010
Detailed Description STP8NM60 - STP8NM60FP STB8NM60 - STD5NM60 - STD5NM60-1 N-CHANNEL 650V@Tjmax-0.9Ω-8A TO-220/FP/D/IPAK/D²PAK STripFET™ II ...
Datasheet PDF File STP8NM60FP PDF File

STP8NM60FP
STP8NM60FP

Overview
STP8NM60 - STP8NM60FP STB8NM60 - STD5NM60 - STD5NM60-1 N-CHANNEL 650V@Tjmax-0.
9Ω-8A TO-220/FP/D/IPAK/D²PAK STripFET™ II MOSFET Table 1: General Features TYPE STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 s s s s Figure 1: Package ID 8A 8 A(*) 5A 5A 5A Pw 100 W 30 W 96 W 96 W 96 W 1Ω 1Ω 1Ω 1Ω 1Ω VDSS 650 V 650 V 650 V 650 V 650 V RDS(on) < < < < < 3 1 2 s TYPICAL RDS(on) = 0.
9 Ω HIGH dv/dt AND AVALANCHE CAPABILITIES 100% AVALANCHE TESTED LOW INPUT CAPACITANCE AND GATE CHARGE LOW GATE INPUT RESISTANCE TO-220 3 1 TO-220FP D²PAK 3 1 1 3 2 DPAK DESCRIPTION The MDmesh™ is a new revolutionary MOSFET technology that associates the Multiple Drain process with the Company’s PowerMESH™ horizontal layout.
The resulting product has an outstanding low on-resistance, impressively high dv/dt and excellent avalanche characteristics.
The adoption of the Company’s proprietary strip technique yields overall dynamic performance that is significantly better than that of similar completition’s products.
IPAK Figure 2: Internal Schematic Diagram APPLICATIONS The MDmesh™ family is very suitable for increase the power density of high voltage converters allowing system miniaturization and higher efficiencies.
Table 2: Order Codes Sales Type STP8NM60 STP8NM60FP STD5NM60 STD5NM60-1 STB8NM60 Marking P8NM60 P8NM60FP D5NM60 D5NM60 B8NM60 Package TO-220 TO-220FP DPAK IPAK D²PAK Packaging TUBE TUBE TAPE & REEL TUBE TAPE & REEL Rev.
2 April 2005 1/16 www.
DataSheet.
in STP8NM60 - STP8NM60FP - STD5NM60 - STD5NM60-1- STB8NM60 Table 3: Absolute Maximum ratings Symbol VGS ID ID IDM ( ) PTOT dv/dt (1) VISO Tj Tstg Parameter TO-220/D²PAK Value TO-220FP DPAK/IPAK Unit V 5 3.
1 20 96 0.
4 15 A A A W W/°C V/ns V °C Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Withstand Voltage (DC) Operating Junction Temperature Storage Te...


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