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STP8NM60D

STMicroelectronics
Part Number STP8NM60D
Manufacturer STMicroelectronics
Description N-CHANNEL Power MOSFET
Published Dec 13, 2010
Detailed Description STB8NM60D STP8NM60D N-CHANNEL 600V - 0.9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh™ Power MOSFET General features Type STB...
Datasheet PDF File STP8NM60D PDF File

STP8NM60D
STP8NM60D

Overview
STB8NM60D STP8NM60D N-CHANNEL 600V - 0.
9Ω - 8A - TO-220/D2PAK Fast Diode MDmesh™ Power MOSFET General features Type STB8NM60D STP8NM60D ■ ■ ■ ■ ■ VDSS 600V 600V RDS(on) < 1.
0Ω < 1.
0Ω ID 8A 8A PTOT 100W 100W 3 1 2 High dv/dt and avalanche capabilities 100% avalanche rated Low input capacitance and gate charge Low gate input resistance Fast internal recovery diode TO-220 3 1 D²PAK Description The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.
It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters Internal schematic diagram Applications The MDmesh™ family is very suitable for increasing power density of high voltage converters allowing system miniaturization and higher efficiencies.
Order codes Sales Type STB8NM60D STP8NM60D Marking B8NM60D P8NM60D Package D²PAK TO-220 Packaging TAPE & REEL TUBE February 2006 Rev2 1/13 www.
st.
com 13 www.
DataSheet.
in Electrical ratings STB8NM60D - STP8NM60D 1 Electrical ratings Table 1.
Symbol VDS VDGR VGS ID ID IDM (1) Absolute maximum ratings Parameter Drain-Source Voltage (V GS = 0) Drain-gate Voltage (R GS = 20kΩ) Gate-Source Voltage Drain Current (continuous) at T C = 25°C Drain Current (continuous) at T C=100°C Drain Current (pulsed) Total Dissipation at T C = 25°C Derating Factor Value 600 600 ±30 8 5 32 100 0.
8 20 -65 to 150 Unit V V V A A A W W/°C V/ns °C PTOT dv/dt(2) TJ Tstg 2.
Peak Diode Recovery voltage slope Operating Junction Temperature Storage Temperature 1.
Pulse width limited by safe operating area ISD ≤5A, di/dt ≤400A/µs, VDD =80% V(BR)DSS Table 2.
Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case Max Thermal resistance junction-ambient Max Maximum lead temperature for soldering purpose Value 1.
25 62.
5 300 Unit °C/W °C/W °C Table 3.
Symbol IAR EAS Avalanche data Parameter Avalanche current, repetitive or not repetitive (pulse width limi...


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