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BSS192

NXP
Part Number BSS192
Manufacturer NXP
Description P-channel enhancement mode vertical D-MOS transistor
Published Sep 5, 2005
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Su...
Datasheet PDF File BSS192 PDF File

BSS192
BSS192

Overview
DISCRETE SEMICONDUCTORS DATA SHEET BSS192 P-channel enhancement mode vertical D-MOS transistor Product specification Supersedes data of July 1993 File under Discrete Semiconductors, SC13b 1997 Jun 20 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor FEATURES • Direct interface to C-MOS, TTL, etc.
• High-speed switching • No secondary breakdown.
APPLICATIONS • Line current interrupter in telephone sets • Relay, high-speed and line transformer drivers.
DESCRIPTION P-channel enhancement mode vertical D-MOS transistor in a SOT89 package.
1 Bottom view Marking code: KB 2 3 MAM354 BSS192 PINNING - SOT89 PIN 1 2 3 SYMBOL s d g drain gate DESCRIPTION source handbook, halfpage d g s Fig.
1 Simplified outline and symbol.
QUICK REFERENCE DATA SYMBOL VDS VGSth ID RDSon PARAMETER drain-source voltage (DC) gate-source threshold voltage drain current (DC) drain-source on-state resistance ID = −100 mA; VGS = −10 V ID = −1 mA; VGS = VDS CONDITIONS MAX.
−240 −2.
8 −150 20 V V mA Ω UNIT 1997 Jun 20 2 Philips Semiconductors Product specification P-channel enhancement mode vertical D-MOS transistor LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL VDS VGSO ID IDM Ptot Tstg Tj PARAMETER drain-source voltage (DC) gate-source voltage (DC) drain current (DC) peak drain current total power dissipation storage temperature junction temperature Tamb ≤ 25 °C; note 1 open drain CONDITIONS − − − − − −65 − MIN.
BSS192 MAX.
−240 ±20 −150 −600 1 +150 150 V V UNIT mA mA W °C °C THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient note 1 CONDITIONS VALUE 125 UNIT K/W Note to the Limiting values and Thermal characteristics 1.
Device mounted on a ceramic substrate; area 2.
5 cm2; thickness 0.
7 mm.
CHARACTERISTICS Tj = 25 °C unless otherwise specified.
SYMBOL V(BR)DSS VGSth IDSS IGSS RDSon yfs Ciss Coss Crss ton toff PARAMETER drain-source breakdown voltage gate-s...


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