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BSS82

Infineon Technologies
Part Number BSS82
Manufacturer Infineon Technologies
Description PNP Transistors
Published Sep 5, 2005
Detailed Description BSS80, BSS82 PNP Silicon Switching Transistors  High DC current gain: 0.1mA to 500 mA  Low collector-emitter saturatio...
Datasheet PDF File BSS82 PDF File

BSS82
BSS82

Overview
BSS80, BSS82 PNP Silicon Switching Transistors  High DC current gain: 0.
1mA to 500 mA  Low collector-emitter saturation voltage  Complementary types: BSS79, BSS81 (NPN) 3 2 1 VPS05161 Type BSS80B BSS80C BSS82B BSS82C Marking CHs CJs CLs CMs 1=B 1=B 1=B 1=B Pin Configuration 2=E 2=E 2=E 2=E 3=C 3=C 3=C 3=C Package SOT23 SOT23 SOT23 SOT23 Maximum Ratings Parameter Collector-emitter voltage Collector-base voltage Emitter-base voltage DC collector current Peak collector current Base current Peak base current Total power dissipation, TS = 77 °C Junction temperature Storage temperature Symbol VCEO VCBO VEBO IC ICM IB IBM Ptot Tj Tstg BSS80 40 60 5 800 1 100 200 330 150 BSS82 60 Unit V V mA A mA mW °C -65 .
.
.
150 Thermal Resistance Junction - soldering point 1) RthJS 220 K/W 1For calculation of R thJA please refer to Application Note Thermal Resistance 1 Nov-30-2001 BSS80, BSS82 Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter Symbol Values min.
DC Characteristics Collector-emitter breakdown voltage IC = 10 mA, IB = 0 Collector-base breakdown voltage IC = 10 µA, IE = 0 Emitter-base breakdown voltage IE = 10 µA, IC = 0 Collector cutoff current VCB = 50 V, IE = 0 Collector cutoff current VCB = 50 V, IE = 0 , TA = 150 °C Emitter cutoff current VEB = 3 V, IC = 0 DC current gain 1) IC = 100 µA, VCE = 10 V IC = 1 mA, VCE = 10 V IC = 10 mA, VCE = 10 V IC = 150 mA, VCE = 10 V IC = 500 mA, VCE = 10 V hFE IEBO ICBO ICBO V(BR)EBO V(BR)CEO typ.
max.
Unit V 40 60 10 10 10 nA µA nA 40 75 40 100 40 100 40 100 40 50 120 300 V 0.
4 1.
6 1.
3 2.
6 BSS80 BSS82 V(BR)CBO 60 5 - BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C BSS80/82B BSS80/82C Collector-emitter saturation voltage1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA Base-emitter saturation voltage 1) IC = 150 mA, IB = 15 mA IC = 500 mA, IB = 50 mA 1) Pulse test: t ≤=300µs, D = 2% VCEsat VBEsat - 2 Nov-30-2001 BSS80, BSS82 Electrical Chara...


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