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IRFP460AS

International Rectifier
Part Number IRFP460AS
Manufacturer International Rectifier
Description Power MOSFET
Published Sep 11, 2005
Detailed Description PD-94011A SMPS MOSFET Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/...
Datasheet PDF File IRFP460AS PDF File

IRFP460AS
IRFP460AS

Overview
PD-94011A SMPS MOSFET Applications l SMPS, UPS, Welding and High Speed VDSS Power Switching 500V Benefits l Dynamic dv/dt Rating l Repetitive Avalanche Rated l Isolated Central Mounting Hole l Fast Switching l Ease of Paralleling l Simple Drive Requirements l Solder plated and leadformed for surface mounting Description Third Generation HEXFET®s from International Rectifier provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices.
The TO-247 is similar but superior to the earlier TO-218 package because of its isolated mounting hole.
It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
This plated and leadformed version of the TO-247 package allows the package to be surface mounted in an application.
IRFP460AS HEXFET® Power MOSFET Rds(on) max 0.
27Ω ID 20A SMD-247 Absolute Maximum Ratings Parameter ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current  Power Dissipation Linear Derating Factor Gate-to-Source Voltage Peak Diode Recovery dv/dt ƒ Operating Junction and Storage Temperature Range Mounting torqe, 6-32 or M3 screw Maximum Reflow Temperature Max.
20 13 80 280 2.
2 ± 30 3.
8 -55 to + 150 10 lbf•in (1.
1N•m) 230 (Time above 183 °C should not exceed 100s) Units A W W/°C V V/ns °C °C Typical SMPS Topologies: l Full Bridge l PFC Boost www.
irf.
com Notes  through … are on page 8 1 01/17/01 IRFP460AS Static @ TJ = 25°C (unless otherwise specified) Parameter Drain-to-Source Breakdown Voltage ∆V(BR)DSS/∆TJ Breakdown Voltage Temp.
Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage V(BR)DSS IDSS IGSS Drain-to-Source Leakage Current Gate-to-Source Forward Le...


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