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STGB7NB60KD

ST Microelectronics
Part Number STGB7NB60KD
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description STGP7NB60KD STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT ADVANCED DATA TYPE STG...
Datasheet PDF File STGB7NB60KD PDF File

STGB7NB60KD
STGB7NB60KD

Overview
STGP7NB60KD STGB7NB60KD STGP7NB60KDFP N-CHANNEL 7A - 600V - TO-220/TO-220FP/D2PAK PowerMESH™ IGBT ADVANCED DATA TYPE STGP7NB60KD STGP7NB60KDFP STGB7NB60KD s s s s s s s s VCES 600 V 600 V 600 V VCE(sat) < 2.
8 V < 2.
8 V < 2.
8 V IC 7A 7A 7A HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY OFF LOSSES INCLUDE TAIL CURRENT VERY HIGH FREQUENCY OPERATION SHORT CIRCUIT RATED CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 2 3 1 2 TO-220 3 1 TO-220FP D2PAK INTERNAL SCHEMATIC DIAGRAM DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH ™ IGBTs, with outstanding performances.
The suffix “K” identifies a family optimized for high frequency motor control applications with short circuit withstand capability.
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STGP7NB60KD STGB7NB60KD VCES VECR VGE IC IC ICM (n) PTOT VISO Tstg Tj June 2002 Collector-Emitter Voltage (VGS = 0) Emitter-Collector Voltage Gate-Emitter Voltage Collector Current (continuos) at TC = 25°C Collector Current (continuos) at TC = 125°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Insulation Withstand Voltage A.
C.
(t = 1 sec; Tc = 25°C) Storage Temperature Max.
Operating Junction Temperature 80 0.
64 -–65 to 150 150 STGP7NB60KDFP 600 20 ±20 14 7 56 35 0.
28 2500 V V V A A A W W/°C V °C °C 1/9 Unit (n ) Pulse width limited by safe operating area STGP7NB60KD/FP/STGB7NB60KD THERMAL DATA TO-220 D2PAK Rthj-case Rthj-amb Rthc-h Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max Thermal Resistance Case-heatsink Typ 1.
56 62.
5 0.
5 TO-220FP 3.
57 °C/W °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Brea...


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