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STGB7NB60HD

ST Microelectronics
Part Number STGB7NB60HD
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description ® STGB7NB60HD N-CHANNEL 7A - 600V DPAK PowerMESH™ IGBT TYPE STGB7NB60HD s V CES 600 V V CE(sat) < 2.8 V IC 7A s s ...
Datasheet PDF File STGB7NB60HD PDF File

STGB7NB60HD
STGB7NB60HD

Overview
® STGB7NB60HD N-CHANNEL 7A - 600V DPAK PowerMESH™ IGBT TYPE STGB7NB60HD s V CES 600 V V CE(sat) < 2.
8 V IC 7A s s s s s s s HIGH INPUT IMPEDANCE (VOLTAGE DRIVEN) LOW ON-VOLTAGE DROP (Vcesat) LOW GATE CHARGE HIGH CURRENT CAPABILITY VERY HIGH FREQUENCY OPERATION OFF LOSSES INCLUDE TAIL CURRENT CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") 3 1 D2PAK TO-263 (Suffix "T4") DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "H" identifies a family optimized to achieve very low switching times for high frequency applications (<120kHz).
APPLICATIONS HIGH FREQUENCY MOTOR CONTROLS s SMPS AND PFC IN BOTH HARD SWITCH AND RESONANT TOPOLOGIES s INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol V CES V GE IC IC ICM ( • ) P tot T stg Tj Parameter Collector-Emitter Voltage (V GS = 0) Gate-Emitter Voltage Collector Current (continuous) at T c = 25 C Collector Current (continuous) at T c = 100 o C Collector Current (pulsed) Total Dissipation at T c = 25 C Derating Factor Storage Temperature Max.
Operating Junction Temperature o o Value 600 ± 20 14 7 56 80 0.
64 -65 to 150 150 Unit V V A A A W W/ o C o o C C (•) Pulse width limited by safe operating area June 1999 1/8 STGB7NB60HD THERMAL DATA R thj-case R thj-amb R thc-sink Thermal Resistance Junction-case Thermal Resistance Junction-ambient Thermal Resistance Case-sink Max Max Typ 1.
56 62.
5 0.
5 o o C/W C/W o C/W ELECTRICAL CHARACTERISTICS (Tj = 25 oC unless otherwise specified) OFF Symbol V BR(CES) I CES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (V GE = 0) Gate-Emitter Leakage Current (V CE = 0) Test Conditions I C = 250 µ A V GE = 0 T j = 25 o C T j = 125 o C V CE = 0 Min.
600 250 2000 ± 100 Typ.
Max.
Unit V µA µA nA V CE = Max Rating V CE = Ma...


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