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STGB7NB60FD

ST Microelectronics
Part Number STGB7NB60FD
Manufacturer ST Microelectronics
Description N-CHANNEL IGBT
Published Sep 28, 2005
Detailed Description STGP7NB60FD - STGB7NB60FD N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH™ IGBT TYPE STGP7NB60FD STGB7NB60FD s s s s s s s ...
Datasheet PDF File STGB7NB60FD PDF File

STGB7NB60FD
STGB7NB60FD

Overview
STGP7NB60FD - STGB7NB60FD N-CHANNEL 7A - 600V TO-220 / D2PAK PowerMESH™ IGBT TYPE STGP7NB60FD STGB7NB60FD s s s s s s s VCES 600 V 600 V VCE(sat) (Max) @25°C < 2.
4 V < 2.
4 V IC @100°C 7A 7A 3 1 2 HIGH INPUT IMPEDANCE LOW ON-VOLTAGE DROP (Vcesat) OFF LOSSES INCLUDE TAIL CURRENT LOW GATE CHARGE HIGH CURRENT CAPABILITY HIGH FREQUENCY OPERATION CO-PACKAGED WITH TURBOSWITCH™ ANTIPARALLEL DIODE 3 1 TO-220 D2PAK DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding perfomances.
The suffix "F" identifies a family optimized to achieve very low switching switching times for high frequency applications (<40KHZ) INTERNAL SCHEMATIC DIAGRAM APPLICATIONS MOTOR CONTROLS s SMPS AND PFC AND BOTH HARD SWITCH AND RESONANT TOPOLOGIES s ORDERING INFORMATION SALES TYPE STGP7NB60FD STGB7NB60FDT4 MARKING GP7NB60FD GB7NB60FD PACKAGE TO-220 D2PAK PACKAGING TUBE TAPE & REEL June 2003 1/11 STGP7NB60FD - STGB7NB60FD ABSOLUTE MAXIMUM RATINGS Symbol VCES VGE IC IC ICM ( ) PTOT Tstg Tj Parameter Collector-Emitter Voltage (VGS = 0) Gate-Emitter Voltage Collector Current (continuous) at TC = 25°C Collector Current (continuous) at TC = 100°C Collector Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Storage Temperature Max.
Operating Junction Temperature Value 600 ±20 14 7 56 80 0.
64 – 55 to 150 150 Unit V V A A A W W/°C °C °C ( ) Pulse width limited by safe operating area THERMAL DATA Rthj-case Rthj-amb Thermal Resistance Junction-case Max Thermal Resistance Junction-ambient Max 1.
56 62.
5 °C/W °C/W ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED) OFF Symbol VBR(CES) ICES IGES Parameter Collector-Emitter Breakdown Voltage Collector cut-off (VGE = 0) Gate-Emitter Leakage Current (VCE = 0) Test Conditions IC = 250 µA, VGE = 0 VCE = Max Rating, TC = 25 °C VCE = Max Rating, TC = 125 °C VGE = ± 20V , VCE = 0 Min.
600 50 100...


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